Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes

Mishra, Abhishek; Abdallah, Zeina; Pomeroy, James W.; Uren, Michael J.; Kuball, Martin

doi:10.1109/ted.2021.3108120

Title: Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes

Journal Article · 10 September 2021 · IEEE Transactions on Electron Devices

DOI: https://doi.org/10.1109/ted.2021.3108120 · OSTI ID:1831094

^[1]; Abdallah, Zeina ^[2];

^[2];

^[2]

Univ. of Bristol (United Kingdom); Arizona State University
Univ. of Bristol (United Kingdom)

The design space of Ga₂O₃-based devices is severely constrained due to its low thermal conductivity and absence of viable p-type dopants. In this work, we discuss the limits of operation of a novel Ga₂O₃–Al₂O₃–diamond-based super-junction device concept, which can alleviate the constraints associated with Ga₂O₃-based devices. The improvements achieved using the proposed device concept are demonstrated through electrical and thermal simulations of Ga₂O₃–Al₂O₃–diamond-based super-junction Schottky barrier diodes (SJ-SBDs) and non-punch-through or conventional Schottky barrier diodes (NP-SBDs). The SJ-SBD enables operation below the R_ON-breakdown voltage limit of Ga₂O₃ NP-SBD, enabling >4 kV blocking voltage at R_ON of 1–3 mΩ cm². Here, the maximum switching frequency of SJ-SBD may be only a few kHz, as it is limited by the activation energy of acceptors (0.39 eV) in the diamond. Crucially, compared with NP-SBD, the use of diamond also results in ~60% reduction in temperature rise during static power dissipation. Polycrystalline diamond (PCD) properties depend on detailed microstructure and benefits compared to ideal Ga₂O₃

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021230

OSTI ID:: 1831094

Journal Information:: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 10 Vol. 68; ISSN 0018-9383

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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