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Title: Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer

Abstract

Nonvanishing Berry curvature dipole (BCD) and persistent spin texture (PST) are intriguing physical manifestations of electronic states in noncentrosymmetric 2D materials. The former induces a nonlinear Hall conductivity while the latter offers a coherent spin current. Based on density-functional-theory (DFT) calculations, we demonstrate the coexistence of both phenomena in a Bi(110) monolayer with a distorted phosphorene structure. Both effects are concurrently enhanced due to the strong spin–orbit coupling of Bi while the structural distortion creates internal in-plane ferroelectricity with inversion asymmetry. We further succeed in fabricating a Bi(110) monolayer in the desired phosphorene structure on the NbSe2 substrate. Detailed atomic and electronic structures of the Bi(110)/NbSe2 heterostructure are characterized by scanning tunneling microscopy/spectroscopy and angle-resolved-photoemission spectroscopy. These results are consistent with DFT calculations which indicate the large BCD and PST are retained. Our results suggest the Bi(110)/NbSe2 heterostructure as a promising platform to exploit nonlinear Hall and coherent spin transport properties together.

Authors:
ORCiD logo [1];  [2];  [1]; ORCiD logo [3]; ORCiD logo [2]
+ Show Author Affiliations
  1. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
  2. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea, Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
  3. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
Publication Date:
Research Org.:
Pohang Univ. of Science and Technology (Korea, Republic of)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1829542
Alternate Identifier(s):
OSTI ID: 1832855
Grant/Contract Number:  
FG02-04ER46148
Resource Type:
Published Article
Journal Name:
Nano Letters
Additional Journal Information:
Journal Name: Nano Letters Journal Volume: 21 Journal Issue: 22; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; Bi(110) monolayer; Berry curvature dipole; nonlinear Hall effect; persistent spin texture; heterostructure; monolayers; band structure; electric fields; quantum mechanics

Citation Formats

Jin, Kyung-Hwan, Oh, Eunseok, Stania, Roland, Liu, Feng, and Yeom, Han Woong. Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer. United States: N. p., 2021. Web. doi:10.1021/acs.nanolett.1c02811.
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Jin, Kyung-Hwan, Oh, Eunseok, Stania, Roland, Liu, Feng, & Yeom, Han Woong. Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer. United States. https://doi.org/10.1021/acs.nanolett.1c02811
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Jin, Kyung-Hwan, Oh, Eunseok, Stania, Roland, Liu, Feng, and Yeom, Han Woong. Mon . "Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer". United States. https://doi.org/10.1021/acs.nanolett.1c02811.
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@article{osti_1829542,
title = {Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer},
author = {Jin, Kyung-Hwan and Oh, Eunseok and Stania, Roland and Liu, Feng and Yeom, Han Woong},
abstractNote = {Nonvanishing Berry curvature dipole (BCD) and persistent spin texture (PST) are intriguing physical manifestations of electronic states in noncentrosymmetric 2D materials. The former induces a nonlinear Hall conductivity while the latter offers a coherent spin current. Based on density-functional-theory (DFT) calculations, we demonstrate the coexistence of both phenomena in a Bi(110) monolayer with a distorted phosphorene structure. Both effects are concurrently enhanced due to the strong spin–orbit coupling of Bi while the structural distortion creates internal in-plane ferroelectricity with inversion asymmetry. We further succeed in fabricating a Bi(110) monolayer in the desired phosphorene structure on the NbSe2 substrate. Detailed atomic and electronic structures of the Bi(110)/NbSe2 heterostructure are characterized by scanning tunneling microscopy/spectroscopy and angle-resolved-photoemission spectroscopy. These results are consistent with DFT calculations which indicate the large BCD and PST are retained. Our results suggest the Bi(110)/NbSe2 heterostructure as a promising platform to exploit nonlinear Hall and coherent spin transport properties together.},
doi = {10.1021/acs.nanolett.1c02811},
journal = {Nano Letters},
number = 22,
volume = 21,
place = {United States},
year = {2021},
month = {11}
}
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https://doi.org/10.1021/acs.nanolett.1c02811
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