Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Rahman, Mohammad Wahidur; Kalarickal, Nidhin Kurian; Lee, Hyunsoo; Razzak, Towhidur; Rajan, Siddharth

doi:10.1063/5.0070665

Title: Integration of high permittivity BaTiO ₃ with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Authors:

^[1];

^[1]; Rajan, Siddharth ^[2]

Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA, Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Publication Date:: 2021-11-08

Sponsoring Org.:: USDOE

OSTI Identifier:: 1829326

Grant/Contract Number:: NA0003921

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 119 Journal Issue: 19; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Rahman, Mohammad Wahidur, Kalarickal, Nidhin Kurian, Lee, Hyunsoo, Razzak, Towhidur, and Rajan, Siddharth. Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors.  United States: N. p., 2021. 
Web.  doi:10.1063/5.0070665.

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                    Rahman, Mohammad Wahidur, Kalarickal, Nidhin Kurian, Lee, Hyunsoo, Razzak, Towhidur, & Rajan, Siddharth. Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors.  United States.  https://doi.org/10.1063/5.0070665

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                    Rahman, Mohammad Wahidur, Kalarickal, Nidhin Kurian, Lee, Hyunsoo, Razzak, Towhidur, and Rajan, Siddharth. Mon .  
"Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors".  United States.  https://doi.org/10.1063/5.0070665.

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@article{osti_1829326,

  title        = {Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors},

  author       = {Rahman, Mohammad Wahidur and Kalarickal, Nidhin Kurian and Lee, Hyunsoo and Razzak, Towhidur and Rajan, Siddharth},

  abstractNote = {},

  doi          = {10.1063/5.0070665},

  journal      = {Applied Physics Letters},

  number       = 19,

  volume       = 119,

  place        = {United States},

  year         = {2021},

  month        = {11}

}

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Works referenced in this record:

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates
journal, July 2020

Chandrasekar, Hareesh; Razzak, Towhidur; Wang, Caiyu
Advanced Electronic Materials, Vol. 6, Issue 8
DOI: 10.1002/aelm.202000074

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure
journal, August 2007

Saito, W.; Nitta, T.; Kakiuchi, Y.
IEEE Transactions on Electron Devices, Vol. 54, Issue 8
DOI: 10.1109/TED.2007.901150

Low cost high voltage GaN polarization superjunction field effect transistors: Low cost high voltage GaN polarization superjunction field effect transistors
journal, April 2017

Kawai, H.; Yagi, S.; Hirata, S.
physica status solidi (a), Vol. 214, Issue 8
DOI: 10.1002/pssa.201600834

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
journal, January 2021

Kalarickal, Nidhin Kurian; Feng, Zixuan; Anhar Uddin Bhuiyan, A. F. M.
IEEE Transactions on Electron Devices, Vol. 68, Issue 1
DOI: 10.1109/TED.2020.3037271

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate
journal, October 2012

Selvaraj, Susai Lawrence; Watanabe, Arata; Wakejima, Akio
IEEE Electron Device Letters, Vol. 33, Issue 10
DOI: 10.1109/LED.2012.2207367

Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN _x Passivation
journal, January 2020

Sohel, Shahadat H.; Rahman, Mohammad Wahidur; Xie, Andy
IEEE Electron Device Letters, Vol. 41, Issue 1
DOI: 10.1109/LED.2019.2951655

Nanoscale etching of perovskite oxides for field effect transistor applications
journal, January 2020

Cheng, Junao; Yang, Hao; Wang, Caiyu
Journal of Vacuum Science & Technology B, Vol. 38, Issue 1
DOI: 10.1116/1.5122667

Slanted Tri-Gates for High-Voltage GaN Power Devices
journal, September 2017

Ma, Jun; Matioli, Elison
IEEE Electron Device Letters, Vol. 38, Issue 9
DOI: 10.1109/LED.2017.2731799

Planar Nearly Ideal Edge-Termination Technique for GaN Devices
journal, March 2011

Ozbek, A. Merve; Baliga, B. Jayant
IEEE Electron Device Letters, Vol. 32, Issue 3
DOI: 10.1109/LED.2010.2095825

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
journal, February 2005

Ye, P. D.; Yang, B.; Ng, K. K.
Applied Physics Letters, Vol. 86, Issue 6
DOI: 10.1063/1.1861122

β-(Al _0.18 Ga _0.82 ) ₂ O ₃ /Ga ₂ O ₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm
journal, June 2021

Kalarickal, Nidhin Kurian; Xia, Zhanbo; Huang, Hsien-Lien
IEEE Electron Device Letters, Vol. 42, Issue 6
DOI: 10.1109/LED.2021.3072052

Design of Transistors Using High-Permittivity Materials
journal, February 2019

Xia, Zhanbo; Wang, Caiyu; Kalarickal, Nidhin Kurian
IEEE Transactions on Electron Devices, Vol. 66, Issue 2
DOI: 10.1109/TED.2018.2888834

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
journal, January 2001

Karmalkar, S.; Mishra, U. K.
IEEE Transactions on Electron Devices, Vol. 48, Issue 8, p. 1515-1521
DOI: 10.1109/16.936500

Band structure and optical properties of tetragonal BaTiO ₃
journal, May 1973

Michel-Calendini, F. M.; Mesnard, G.
Journal of Physics C: Solid State Physics, Vol. 6, Issue 10
DOI: 10.1088/0022-3719/6/10/007

Hybrid BaTiO ₃ /SiN _x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance
journal, July 2021

Rahman, Mohammad Wahidur; Chandrasekar, Hareesh; Razzak, Towhidur
Applied Physics Letters, Vol. 119, Issue 1
DOI: 10.1063/5.0055946

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
journal, September 2006

Dora, Y.; Chakraborty, A.; Mccarthy, L.
IEEE Electron Device Letters, Vol. 27, Issue 9, p. 713-715
DOI: 10.1109/LED.2006.881020

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-$k$ Passivation Layer
journal, March 2014

Hanawa, Hideyuki; Onodera, Hiraku; Nakajima, Atsushi
IEEE Transactions on Electron Devices, Vol. 61, Issue 3
DOI: 10.1109/TED.2014.2298194

N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
journal, July 2018

Koksaldi, Onur S.; Haller, Jeffrey; Li, Haoran
IEEE Electron Device Letters, Vol. 39, Issue 7
DOI: 10.1109/LED.2018.2834939

GaN Power Transistors on Si Substrates for Switching Applications
journal, July 2010

Ikeda, Nariaki; Niiyama, Yuki; Kambayashi, Hiroshi
Proceedings of the IEEE, Vol. 98, Issue 7
DOI: 10.1109/JPROC.2009.2034397

Metal/BaTiO ₃ /β-Ga ₂ O ₃ dielectric heterojunction diode with 5.7 MV/cm breakdown field
journal, December 2019

Xia, Zhanbo; Chandrasekar, Hareesh; Moore, Wyatt
Applied Physics Letters, Vol. 115, Issue 25
DOI: 10.1063/1.5130669

Prospects for the application of GaN power devices in hybrid electric vehicle drive systems
journal, June 2013

Su, Ming; Chen, Chingchi; Rajan, Siddharth
Semiconductor Science and Technology, Vol. 28, Issue 7
DOI: 10.1088/0268-1242/28/7/074012

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator
journal, November 2009

Liu, Z. H.; Ng, G. I.; Arulkumaran, S.
Applied Physics Letters, Vol. 95, Issue 22
DOI: 10.1063/1.3268474

30-W/mm GaN HEMTs by Field Plate Optimization
journal, March 2004

Wu, Y. -F.; Saxler, A.; Moore, M.
IEEE Electron Device Letters, Vol. 25, Issue 3
DOI: 10.1109/LED.2003.822667

Analytical Field Plate Model for Field Effect Transistors
journal, March 2014

Coffie, Robert
IEEE Transactions on Electron Devices, Vol. 61, Issue 3
DOI: 10.1109/TED.2014.2300115

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
journal, April 2004

Xing, H.; Dora, Y.; Chini, A.
IEEE Electron Device Letters, Vol. 25, Issue 4
DOI: 10.1109/LED.2004.824845

High Breakdown ( >1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
journal, September 2010

Lu, Bin; Palacios, Tomás
IEEE Electron Device Letters, Vol. 31, Issue 9, p. 951-953
DOI: 10.1109/LED.2010.2052587

BaTiO ₃ /Al _0.58 Ga _0.42 N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
journal, January 2020

Razzak, Towhidur; Chandrasekar, Hareesh; Hussain, Kamal
Applied Physics Letters, Vol. 116, Issue 2
DOI: 10.1063/1.5130590

Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High- k Bismuth Zinc Niobate Oxide
journal, July 2021

Cheng, Junao; Rahman, Mohammad Wahidur; Xie, Andy
IEEE Transactions on Electron Devices, Vol. 68, Issue 7
DOI: 10.1109/TED.2021.3084136

GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV
journal, September 2015

Herbecq, N.; Roch‐Jeune, I.; Linge, A.
Electronics Letters, Vol. 51, Issue 19
DOI: 10.1049/el.2015.1684

1900 V, 1.6 mΩ cm ² AlN/GaN-on-Si power devices realized by local substrate removal
journal, February 2014

Herbecq, Nicolas; Roch-Jeune, Isabelle; Rolland, Nathalie
Applied Physics Express, Vol. 7, Issue 3
DOI: 10.7567/APEX.7.034103

High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer
journal, April 2021

Kim, Jeong-Gil; Cho, Chuyoung; Kim, Eunjin
IEEE Transactions on Electron Devices, Vol. 68, Issue 4
DOI: 10.1109/TED.2021.3057000

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier
journal, July 2012

Lee, Hyung-Seok; Piedra, Daniel; Sun, Min
IEEE Electron Device Letters, Vol. 33, Issue 7
DOI: 10.1109/LED.2012.2196673

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Title: Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Citation Formats

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates journal, July 2020

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Title: Integration of high permittivity BaTiO ₃ with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

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journal, January 2020

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journal, July 2021

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