Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Agbalagba, Ezekiel O.; Drabo, Mebougna L.; Egarievwe, Stephen U.; Roy, Utpal N.; Davis, Amir H.; Israel, Mordecai B.; Alexander, Parion L.; James, Ralph B.

doi:10.4236/msa.2021.128025

Title: Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Journal Article · 04 August 2021 · Materials Sciences and Applications

DOI: https://doi.org/10.4236/msa.2021.128025 · OSTI ID:1828521

Agbalagba, Ezekiel O. ^[1]; Drabo, Mebougna L. ^[2]; Egarievwe, Stephen U. ^[3]; Roy, Utpal N. ^[4]; Davis, Amir H. ^[5]; Israel, Mordecai B. ^[6]; Alexander, Parion L. ^[2]; James, Ralph B. ^[7]

Federal Univ. of Petroleum Resources, Effurun (Nigeria)
Alabama A&M Univ., Huntsville, AL (United States)
Alabama A&M Univ., Huntsville, AL (United States); Univ. of South Alabama, Mobile, AL (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)
Stanford Univ., CA (United States)
Alabama A&M Univ., Huntsville, AL (United States); Univ. of South Alabama, Mobile, AL (United States)
Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 10¹⁰ Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of ²⁴¹Am.

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Research Organization:: Savannah River National Lab (SRNL), Aiken, SC (United States); Savannah River Site (SRS), Aiken, SC (United States)

Sponsoring Organization:: USDOE Office of Environmental Management (EM)

Grant/Contract Number:: 89303321CEM000080

OSTI ID:: 1828521

Report Number(s):: SRNL-STI--2021-00321

Journal Information:: Materials Sciences and Applications, Journal Name: Materials Sciences and Applications Journal Issue: 08 Vol. 12; ISSN 2153-117X

Publisher:: Scientific Research Publishing, Inc.Copyright Statement

Country of Publication:: United States

Language:: English

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