Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance
Abstract
Topological protection against localization causes electrical transport phenomena in disordered topological materials to differ from those in topologically trivial systems. For example, a transition between a regime of weak localization to one of weak antilocalization can occur in systems such as topological insulators and topological semimetals when an external potential is applied across the system. Here, we report on the transverse magnetoresistance of thin films of cadmium arsenide, a topological non-trivial material, as we tune the electronic states and the Fermi level. We show that the appearance of weak localization and weak antilocalization sensitively reflects the relative contributions of multiple transport channels involving both gapless (massless) and gapped (massive) Dirac fermion states present in these films. Furthermore, the data is consistent with expectations of the different topological states of these films. Weak (anti-) localization phenomena can therefore serve as a probe of the types of Dirac fermions present in topological semimetals.
- Authors:
-
[1];
[1];
[1]
- Univ. of California, Santa Barbara, CA (United States)
- Univ. of Waterloo, ON (Canada)
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1827696
- Alternate Identifier(s):
- OSTI ID: 1827774
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 119; Journal Issue: 17; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Thin films; Semimetals; Topological phases; Transition metals; Topological insulator; Epitaxy; Arsenide; Dirac fermions; Surface states
Citation Formats
Shoron, Omor F., Kealhofer, David A., Goyal, Manik, Schumann, Timo, Burkov, Anton A., and Stemmer, Susanne. Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance. United States: N. p., 2021.
Web. doi:10.1063/5.0066252.
Shoron, Omor F., Kealhofer, David A., Goyal, Manik, Schumann, Timo, Burkov, Anton A., & Stemmer, Susanne. Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance. United States. https://doi.org/10.1063/5.0066252
Shoron, Omor F., Kealhofer, David A., Goyal, Manik, Schumann, Timo, Burkov, Anton A., and Stemmer, Susanne. Wed .
"Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance". United States. https://doi.org/10.1063/5.0066252. https://www.osti.gov/servlets/purl/1827696.
@article{osti_1827696,
title = {Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance},
author = {Shoron, Omor F. and Kealhofer, David A. and Goyal, Manik and Schumann, Timo and Burkov, Anton A. and Stemmer, Susanne},
abstractNote = {Topological protection against localization causes electrical transport phenomena in disordered topological materials to differ from those in topologically trivial systems. For example, a transition between a regime of weak localization to one of weak antilocalization can occur in systems such as topological insulators and topological semimetals when an external potential is applied across the system. Here, we report on the transverse magnetoresistance of thin films of cadmium arsenide, a topological non-trivial material, as we tune the electronic states and the Fermi level. We show that the appearance of weak localization and weak antilocalization sensitively reflects the relative contributions of multiple transport channels involving both gapless (massless) and gapped (massive) Dirac fermion states present in these films. Furthermore, the data is consistent with expectations of the different topological states of these films. Weak (anti-) localization phenomena can therefore serve as a probe of the types of Dirac fermions present in topological semimetals.},
doi = {10.1063/5.0066252},
journal = {Applied Physics Letters},
number = 17,
volume = 119,
place = {United States},
year = {2021},
month = {10}
}
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