Inherent stochasticity during insulator–metal transition in VO2

Cheng, Shaobo; Lee, Min-Han; Tran, Richard; Shi, Yin; Li, Xing; Navarro, Henry; Adda, Coline; Meng, Qingping; Chen, Long-Qing; Dynes, R. C.; Ong, Shyue Ping; Schuller, Ivan K.; Zhu, Yimei

doi:10.1073/pnas.2105895118

Title: Inherent stochasticity during insulator–metal transition in VO₂

Journal Article · 06 September 2021 · Proceedings of the National Academy of Sciences of the United States of America

DOI: https://doi.org/10.1073/pnas.2105895118 · OSTI ID:1823599

^[1];

^[2]; Tran, Richard ^[2];

^[3]; Li, Xing ^[4];

^[2];

^[2]; Meng, Qingping ^[5]; Chen, Long-Qing ^[4];

^[2]; Ong, Shyue Ping ^[2];

^[2];

^[5]

Brookhaven National Lab. (BNL), Upton, NY (United States); Penn State University
Univ. of California San Diego, La Jolla, CA (United States)
Pennsylvania State Univ., University Park, PA (United States)
Zhengzhou Univ. (China)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Vanadium dioxide (VO₂), which exhibits a near-room-temperature insulator–metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO₂ at local areas in planar VO₂/TiO₂ device configuration under external biasing. After each resistive switching, different VO₂ monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Furthermore, our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO₂ as the key material of neuromorphic computing.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Pennsylvania State Univ., University Park, PA (United States); Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: SC0012704; SC0019273; SC0020145

OSTI ID:: 1823599

Report Number(s):: BNL--222210-2021-JAAM

Journal Information:: Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Issue: 37 Vol. 118; ISSN 0027-8424

Publisher:: National Academy of SciencesCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Inherent stochasticity during insulator–metal transition in VO2

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Title: Inherent stochasticity during insulator–metal transition in VO₂