Title: Temperature dependence of irradiation-induced nanocrystallization in amorphous silicon carbide

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms

Not Available

Sponsoring Organization:
USDOE Office of Science (SC), Fusion Energy Sciences (FES)
Grant/Contract Number:
AC05-76RL01830
OSTI ID:
1822978
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Journal Issue: C Vol. 507; ISSN 0168-583X
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English

References (27)

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Molecular dynamics study of homogeneous crystal nucleation in amorphous silicon journal January 2005
First principles calculation of noble gas atoms properties in 3C–SiC journal October 2012
Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures journal July 2018
Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes journal November 2016
Density and structural changes in SiC after amorphization and annealing journal June 1997
Atomic scale simulation of defect production in irradiated 3C-SiC journal September 2001
Low-resistivity, p -type SiC layers produced by Al implantation and ion-beam-induced crystallization journal July 2002
A thermal spike model of grain growth under irradiation journal January 2008
Damage profile and ion distribution of slow heavy ions in compounds journal May 2009
Ion‐bombardment‐enhanced grain growth in germanium, silicon, and gold thin films journal September 1988
High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells journal July 2010
Annealing and recrystallization of amorphous silicon carbide produced by ion implantation journal November 1998
Crystal grain nucleation in amorphous silicon journal November 1998
Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures journal February 1999
Thermal-spike treatment of ion-induced grain growth: Theory and experimental comparison journal February 1993
Mechanism and kinetics of the ion-assisted nucleation in amorphous silicon journal March 1996
Atomistic study of intrinsic defect migration in 3C-SiC journal June 2004
Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial journal February 2005
Phase Relationship between 3C- and 6H-Silicon Carbide at High Pressure and High Temperature journal December 2001
Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide journal October 2011
Nanocrystalline silicon carbide films for solar photovoltaics: The role of dangling-bond defects journal January 2008
Atomic-level simulation of epitaxial recrystallization and phase transformation in SiC journal June 2006

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