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Title: Temperature dependence of irradiation-induced nanocrystallization in amorphous silicon carbide

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms

Not Available

Sponsoring Organization:
USDOE Office of Science (SC), Fusion Energy Sciences (FES)
Grant/Contract Number:
AC05-76RL01830
OSTI ID:
1822978
Alternate ID(s):
OSTI ID: 1829445
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Journal Issue: C Vol. 507; ISSN 0168-583X
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English

References (27)

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XPS and XRD study of crystalline 3C-SiC grown by sublimation method journal May 1999
Density and structural changes in SiC after amorphization and annealing journal June 1997
Damage profile and ion distribution of slow heavy ions in compounds journal May 2009
Thermal-spike treatment of ion-induced grain growth: Theory and experimental comparison journal February 1993
Atomic-level simulation of epitaxial recrystallization and phase transformation in SiC journal June 2006
Ion-beam-induced crystal grain nucleation in amorphous silicon carbide journal March 2000
Phase Relationship between 3C- and 6H-Silicon Carbide at High Pressure and High Temperature journal December 2001
High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells journal July 2010
Molecular dynamics study of homogeneous crystal nucleation in amorphous silicon journal January 2005
Mechanism and kinetics of the ion-assisted nucleation in amorphous silicon journal March 1996
Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes journal November 2016
First principles calculation of noble gas atoms properties in 3C–SiC journal October 2012
Nanocrystalline silicon carbide films for solar photovoltaics: The role of dangling-bond defects journal January 2008
Ion beam analysis of irradiation effects in 6H–SiC journal May 2003
A thermal spike model of grain growth under irradiation journal January 2008
Kinetic and thermodynamic enhancement of crystal nucleation and growth rates in amorphous Si film during ion irradiation journal July 1991
Annealing and recrystallization of amorphous silicon carbide produced by ion implantation journal November 1998
Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide journal October 2011
Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial journal February 2005
Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures journal February 1999
Temperature and dose dependence of ion-beam-induced amorphization in α-SiC journal April 1997
Crystal grain nucleation in amorphous silicon journal November 1998
Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures journal July 2018
Ion‐bombardment‐enhanced grain growth in germanium, silicon, and gold thin films journal September 1988

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