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Title: Exploring the phase space of Zn2SbN3, a novel semiconducting nitride

Journal Article · · Journal of Materials Chemistry C
DOI: https://doi.org/10.1039/d1tc03056f · OSTI ID:1821414

The novel semiconductor Zn2SbN3 is one of a growing list of ternary nitrides with promise for optoelectronic and energy applications. Previous work by Arca et al. [Materials Horizons, 2019, 6, 1669–1974] first reported synthesis of this material, but did not explore the effects of growth conditions on material formation. In this work, we present a semi-automated study of the relationship between growth conditions and crystallinity via high-throughput RF sputtering and a custom X-ray diffraction analysis routine. Zn2SbN3 is found to crystallize in a wide range of growth conditions, and the formation of several contaminant phases is examined. Electron microscopy of these secondary phases, caused both by off-stoichiometry and by growth conditions, provides insight into the growth mechanisms of Zn2SbN3. Furthermore, computational work relates this material to other Zn-based ternary nitrides and offers an explanation for the difficulty of growing cation-ordered material despite the wide range of growth conditions explored.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-76SF00515; AC36-08GO28308
OSTI ID:
1821414
Report Number(s):
NREL/JA-5K00-80812; MainId:78590; UUID:25188675-a039-40f5-af42-42c97aba0b22; MainAdminID:61839
Journal Information:
Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 9 Vol. 2021; ISSN 2050-7526
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English

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