The criteria in above-bandgap photo-irradiation in molecular beam epitaxy growth of heterostructure of dissimilar growth temperature

Park, Kwangwook; Min, Jung-Wook; Park, Gyeong Cheol; Lopatin, Sergei; Ooi, Boon S.; Alberi, Kirstin

doi:10.1016/j.apsusc.2021.151067

Title: The criteria in above-bandgap photo-irradiation in molecular beam epitaxy growth of heterostructure of dissimilar growth temperature

Journal Article · 25 August 2021 · Applied Surface Science

DOI: https://doi.org/10.1016/j.apsusc.2021.151067 · OSTI ID:1820574

Park, Kwangwook ^[1]; Min, Jung-Wook ^[2]; Park, Gyeong Cheol ^[3]; Lopatin, Sergei ^[2]; Ooi, Boon S. ^[2]; Alberi, Kirstin ^[4]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Jeonbuk National Univ., Jeonju (Korea)
King Abdullah Univ. of Science and Technology, Thuwal (Saudi Arabia)
Electronics and Telecommunications Research Inst., Daejeon (Korea)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Above-bandgap photo-irradiation is known to improve the low temperature growth of II-VI semiconductors, but the trade-offs in the substrate temperature and light source power density are not well known. We investigated these effects on the growth of ZnSe epilayers on GaAs. Here, we find that the above-bandgap photo-irradiation can improve the ZnSe epilayer without substantially negatively impacting the underlying GaAs epilayer only if the laser energy is below a threshold intensity. When the threshold is exceeded, the growth rate drops, the optical properties of ZnSe layer deteriorate and interface intermixing is enhanced. Together, cross-sectional transmission electron microscopy, energy dispersive spectroscopy and photoluminescence results suggest that photo-irradiation at moderate to high laser energies produces a trade-off in interface intermixing and planar defect formation. Most importantly, the damage produced by high laser energies does not start at the interface but instead in the bulk. Further flexibility for selecting the temperature and photo-irradiation intensities could be realized by turning on the laser irradiation after the ZnSe growth has been initiated, limiting the potential intermixing at the interface.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-08GO28308; EE0006335

OSTI ID:: 1820574

Report Number(s):: NREL/JA--5K00-80690; MainId:77474; UUID:b3357f38-bd3d-4634-b769-da6c0c64fe74; MainAdminID:61729

Journal Information:: Applied Surface Science, Journal Name: Applied Surface Science Vol. 569; ISSN 0169-4332

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
II-VI semiconductors
III-V semiconductors
epitaxy
heterostructure
heterovalent interface
light-assisted
molecular beam epitaxy
photo-assisted growth

Title: The criteria in above-bandgap photo-irradiation in molecular beam epitaxy growth of heterostructure of dissimilar growth temperature

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