Revealing quantum effects in highly conductive δ-layer systems
Abstract
Abstract Thin, high-density layers of dopants in semiconductors, known as δ -layer systems, have recently attracted attention as a platform for exploration of the future quantum and classical computing when patterned in plane with atomic precision. However, there are many aspects of the conductive properties of these systems that are still unknown. Here we present an open-system quantum transport treatment to investigate the local density of electron states and the conductive properties of the δ -layer systems. A successful application of this treatment to phosphorous δ -layer in silicon both explains the origin of recently-observed shallow sub-bands and reproduces the sheet resistance values measured by different experimental groups. Further analysis reveals two main quantum-mechanical effects: 1) the existence of spatially distinct layers of free electrons with different average energies; 2) significant dependence of sheet resistance on the δ -layer thickness for a fixed sheet charge density.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
- OSTI Identifier:
- 1819780
- Alternate Identifier(s):
- OSTI ID: 1828022
- Report Number(s):
- SAND-2021-8311J
Journal ID: ISSN 2399-3650; 205; PII: 705
- Grant/Contract Number:
- NA0003525; 213017
- Resource Type:
- Published Article
- Journal Name:
- Communications Physics
- Additional Journal Information:
- Journal Name: Communications Physics Journal Volume: 4 Journal Issue: 1; Journal ID: ISSN 2399-3650
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Mamaluy, Denis, Mendez, Juan P., Gao, Xujiao, and Misra, Shashank. Revealing quantum effects in highly conductive δ-layer systems. United Kingdom: N. p., 2021.
Web. doi:10.1038/s42005-021-00705-1.
Mamaluy, Denis, Mendez, Juan P., Gao, Xujiao, & Misra, Shashank. Revealing quantum effects in highly conductive δ-layer systems. United Kingdom. https://doi.org/10.1038/s42005-021-00705-1
Mamaluy, Denis, Mendez, Juan P., Gao, Xujiao, and Misra, Shashank. Mon .
"Revealing quantum effects in highly conductive δ-layer systems". United Kingdom. https://doi.org/10.1038/s42005-021-00705-1.
@article{osti_1819780,
title = {Revealing quantum effects in highly conductive δ-layer systems},
author = {Mamaluy, Denis and Mendez, Juan P. and Gao, Xujiao and Misra, Shashank},
abstractNote = {Abstract Thin, high-density layers of dopants in semiconductors, known as δ -layer systems, have recently attracted attention as a platform for exploration of the future quantum and classical computing when patterned in plane with atomic precision. However, there are many aspects of the conductive properties of these systems that are still unknown. Here we present an open-system quantum transport treatment to investigate the local density of electron states and the conductive properties of the δ -layer systems. A successful application of this treatment to phosphorous δ -layer in silicon both explains the origin of recently-observed shallow sub-bands and reproduces the sheet resistance values measured by different experimental groups. Further analysis reveals two main quantum-mechanical effects: 1) the existence of spatially distinct layers of free electrons with different average energies; 2) significant dependence of sheet resistance on the δ -layer thickness for a fixed sheet charge density.},
doi = {10.1038/s42005-021-00705-1},
journal = {Communications Physics},
number = 1,
volume = 4,
place = {United Kingdom},
year = {Mon Sep 13 00:00:00 EDT 2021},
month = {Mon Sep 13 00:00:00 EDT 2021}
}
https://doi.org/10.1038/s42005-021-00705-1
Works referenced in this record:
The sub-band structure of atomically sharp dopant profiles in silicon
journal, June 2020
- Mazzola, Federico; Chen, Chin-Yi; Rahman, Rajib
- npj Quantum Materials, Vol. 5, Issue 1
Electronic structure of n -type δ-doping multiple layers and superlattices in silicon
journal, September 1994
- Scolfaro, L. M. R.; Beliaev, D.; Enderlein, R.
- Physical Review B, Vol. 50, Issue 12
Morphology and electrical conduction of Si:P δ-doped layers on vicinal Si(001)
journal, September 2008
- Reusch, T. C. G.; Goh, K. E. J.; Pok, W.
- Journal of Applied Physics, Vol. 104, Issue 6
The fundamental downscaling limit of field effect transistors
journal, May 2015
- Mamaluy, Denis; Gao, Xujiao
- Applied Physics Letters, Vol. 106, Issue 19
Quantized states in delta-doped Si layers
journal, January 1989
- Eisele, I.
- Superlattices and Microstructures, Vol. 6, Issue 1
Electronic properties of -doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method
journal, January 2014
- Smith, J. S.; Cole, J. H.; Russo, S. P.
- Physical Review B, Vol. 89, Issue 3
A two-qubit gate between phosphorus donor electrons in silicon
journal, July 2019
- He, Y.; Gorman, S. K.; Keith, D.
- Nature, Vol. 571, Issue 7765
The silicon MOSFET from a transmission viewpoint
journal, March 1998
- Datta, S.; Assad, F.; Lundstrom, M. S.
- Superlattices and Microstructures, Vol. 23, Issue 3-4
Operation of a silicon quantum processor unit cell above one kelvin
journal, April 2020
- Yang, C. H.; Leon, R. C. C.; Hwang, J. C. C.
- Nature, Vol. 580, Issue 7803
Observation and origin of the manifold in Si:P layers
journal, March 2020
- Holt, Ann Julie; Mahatha, Sanjoy K.; Stan, Raluca-Maria
- Physical Review B, Vol. 101, Issue 12
Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods
journal, July 2010
- Sabry, Yasser M.; Abdolkader, Tarek M.; Farouk, Wael F.
- International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 24, Issue 4
Delta doping in silicon
journal, January 1993
- Gossmann, H. -J.; Schubert, E. F.
- Critical Reviews in Solid State and Materials Sciences, Vol. 18, Issue 1
Atomistic modeling of metallic nanowires in silicon
journal, January 2013
- Ryu, Hoon; Lee, Sunhee; Weber, Bent
- Nanoscale, Vol. 5, Issue 18
Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
journal, February 2013
- Drumm, Daniel W.; Budi, Akin; Per, Manolo C.
- Nanoscale Research Letters, Vol. 8, Issue 1
-type -doping quantum wells and superlattices in Si: Self-consistent hole potentials and band structures
journal, December 1998
- Rosa, A. L.; Scolfaro, L. M. R.; Enderlein, R.
- Physical Review B, Vol. 58, Issue 23
A single-atom transistor
journal, February 2012
- Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta
- Nature Nanotechnology, Vol. 7, Issue 4
High-Order Element Effects of the Green's Function in Quantum Transport Simulation of Nanoscale Devices
journal, December 2009
- Wang, Hao; Wang, Gaofeng; Chang, Sheng
- IEEE Transactions on Electron Devices, Vol. 56, Issue 12
Thermoelectric Effects in Nanoscale Junctions
journal, January 2009
- Dubi, Yonatan; Di Ventra, Massimiliano
- Nano Letters, Vol. 9, Issue 1
Theoretical study of phosphorous -doped silicon for quantum computing
journal, January 2005
- Qian, Gefei; Chang, Yia-Chung; Tucker, J. R.
- Physical Review B, Vol. 71, Issue 4
Scaling Challenges for Advanced CMOS Devices
journal, February 2017
- Jacob, Ajey P.; Xie, Ruilong; Sung, Min Gyu
- International Journal of High Speed Electronics and Systems, Vol. 26, Issue 01n02
Low resistivity, super-saturation phosphorus-in-silicon monolayer doping
journal, March 2014
- McKibbin, S. R.; Polley, C. M.; Scappucci, G.
- Applied Physics Letters, Vol. 104, Issue 12
Effective mass theory of monolayer doping in the high-density limit
journal, April 2012
- Drumm, Daniel W.; Hollenberg, Lloyd C. L.; Simmons, Michelle Y.
- Physical Review B, Vol. 85, Issue 15
Effect of encapsulation temperature on Si:P δ-doped layers
journal, November 2004
- Goh, K. E. J.; Oberbeck, L.; Simmons, M. Y.
- Applied Physics Letters, Vol. 85, Issue 21
Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors
journal, January 2018
- Mazzola, F.; Wells, J. W.; Pakpour-Tabrizi, A. C.
- Physical Review Letters, Vol. 120, Issue 4
Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices
journal, October 2009
- Goh, K. E. J.; Simmons, M. Y.
- Applied Physics Letters, Vol. 95, Issue 14
Electrical characterization and subband structures in antimony δ-doped molecular beam epitaxy-silicon layers
journal, December 1989
- Li, Hui-Min; Ni, Wei-Xin; Willander, Magnus
- Thin Solid Films, Vol. 183, Issue 1-2
Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas
journal, March 2013
- Miwa, Jill A.; Hofmann, Philip; Simmons, Michelle Y.
- Physical Review Letters, Vol. 110, Issue 13
Analysis of ballistic transport in nanoscale devices by using an accelerated finite element contact block reduction approach
journal, August 2014
- Li, H.; Li, G.
- Journal of Applied Physics, Vol. 116, Issue 8
Self-interaction correction to density-functional approximations for many-electron systems
journal, May 1981
- Perdew, J. P.; Zunger, Alex
- Physical Review B, Vol. 23, Issue 10, p. 5048-5079
Influence of doping density on electronic transport in degenerate Si:P -doped layers
journal, January 2006
- Goh, K. E. J.; Oberbeck, L.; Simmons, M. Y.
- Physical Review B, Vol. 73, Issue 3
Valley Splitting in a Silicon Quantum Device Platform
journal, March 2014
- Miwa, Jill A.; Warschkow, Oliver; Carter, Damien J.
- Nano Letters, Vol. 14, Issue 3
CMOS platform for atomic-scale device fabrication
journal, August 2018
- Škereň, Tomáš; Pascher, Nikola; Garnier, Arnaud
- Nanotechnology, Vol. 29, Issue 43
Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects
journal, January 2011
- Carter, Damien J.; Marks, Nigel A.; Warschkow, Oliver
- Nanotechnology, Vol. 22, Issue 6
Efficient self-consistent quantum transport simulator for quantum devices
journal, April 2014
- Gao, X.; Mamaluy, D.; Nielsen, E.
- Journal of Applied Physics, Vol. 115, Issue 13
Electronic structure of realistically extended atomistically resolved disordered Si:P -doped layers
journal, November 2011
- Lee, Sunhee; Ryu, Hoon; Campbell, Huw
- Physical Review B, Vol. 84, Issue 20
Scaling Theory Put into Practice: First-Principles Modeling of Transport in Doped Silicon Nanowires
journal, August 2007
- Markussen, Troels; Rurali, Riccardo; Jauho, Antti-Pekka
- Physical Review Letters, Vol. 99, Issue 7
Efficient method for the calculation of ballistic quantum transport
journal, April 2003
- Mamaluy, D.; Sabathil, M.; Vogl, P.
- Journal of Applied Physics, Vol. 93, Issue 8
Electronic structure models of phosphorus -doped silicon
journal, January 2009
- Carter, Damien J.; Warschkow, Oliver; Marks, Nigel A.
- Physical Review B, Vol. 79, Issue 3