Title: Surface Conversion of Single-Crystal Bi2Se3 to β-In2Se3

Journal Article · · Journal of Crystal Growth
 [1];  [2];  [1]; ORCiD logo [1];  [1]; ORCiD logo [3];  [4]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  4. Colorado School of Mines, Golden, CO (United States)
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In this work, we demonstrate that the surface layers of single-crystal layered-2D Bi2Se3 can be converted to layered-2D rhombohedral ß-In2Se3 by annealing under a trimethylindium (TMIn) flux. Samples were prepared in a metalorganic chemical vapor deposition (MOCVD) chamber, then transferred under vacuum to a surface analysis chamber for analysis with low-energy electron diffraction (LEED) and Auger electron spectroscopy. Additional ex situ characterization included x-ray diffraction, transmission-electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS) elemental mapping, and Raman spectroscopy. The resulting single-crystal ß-In2Se3 adopts the rhombohedral crystal structure (space group R-3m) and orientation of the underlying Bi2Se3, and the excess Bi atoms generated by this process create an underlying region of Bi-rich BixSey. Due to the difference in bandgap between Bi2Se3 and In2Se3, this conversion reaction presents a pathway to lateral heterojunctions if only selected regions are converted by masking the surface to spatially define the TMIn exposure. The conversion may also have implications for heteroepitaxy, because the in-plane lattice constants of Bi2Se3 and In2Se3 (0001) surfaces match those of InP and GaAs (111), respectively, and the natural cleavage planes of a layered-2D crystal facilitate substrate removal and reuse.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1818217
Report Number(s):
NREL/JA-5900-79969; MainId:41174; UUID:e146e8ec-ae4d-427c-ad4c-fc7f5b789edc; MainAdminID:60624
Journal Information:
Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 573; ISSN 0022-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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