Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Lundh, James Spencer; Coleman, Kathleen; Song, Yiwen; Griffin, Benjamin A.; Esteves, Giovanni; Douglas, Erica A.; Edstrand, Adam; Badescu, Stefan C.; Moore, Elizabeth A.; Leach, Jacob H.; Moody, Baxter; Trolier-McKinstry, Susan; Choi, Sukwon

doi:10.1063/5.0056302

Title: Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Journal Article · 22 July 2021 · Journal of Applied Physics

DOI: https://doi.org/10.1063/5.0056302 · OSTI ID:1817725

^[1];

^[1]; Song, Yiwen ^[1]; Griffin, Benjamin A. ^[2];

^[3];

^[3]; Edstrand, Adam ^[3];

^[4]; Moore, Elizabeth A. ^[5]; Leach, Jacob H. ^[6]; Moody, Baxter ^[7];

^[1];

^[1]

Pennsylvania State Univ., University Park, PA (United States)
Defense Advanced Research Projects Agency, Arlington, VA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States); KBRwyle, Dayton, OH (United States)
Kyma Technologies, Inc., Raleigh, NC (United States)
HexaTech, Inc., Morrisville, NC (United States)

In this study, the Raman biaxial stress coefficients K^II and strain-free phonon frequencies ω₀ have been determined for the E₂ (low), E₂ (high), and A₁ (LO) phonon modes of aluminum nitride, AlN, using both experimental and theoretical approaches. The E₂ (high) mode of AlN is recommended for the residual stress analysis of AlN due to its high sensitivity and the largest signal-to-noise ratio among the studied modes. The E₂ (high) Raman biaxial stress coefficient of ₋3.8 cm₋1/GPa and strain-free phonon frequency of 656.68 cm^₋1 were then applied to perform both macroscopic and microscopic stress mappings. For macroscopic stress evaluation, the spatial variation of residual stress was measured across an AlN-on-Si wafer prepared by sputter deposition. A cross-wafer variation in residual stress of ~150 MPa was observed regardless of the average stress state of the film. Microscopic stress evaluation was performed on AlN piezoelectric micromachined ultrasonic transducers (pMUTs) with submicrometer spatial resolution. These measurements were used to assess the effect of device fabrication on residual stress distribution in an individual pMUT and the effect of residual stress on the resonance frequency. At ~20 μm directly outside the outer edge of the pMUT electrode, a large lateral spatial variation in residual stress of ~100 MPa was measured, highlighting the impact of metallization structures on residual stress in the AlN film.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1817725

Report Number(s):: SAND--2021-9082J; 698029

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 130; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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