Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: The Creation of True Two-Dimensional Silicon Carbide

Abstract

This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp3 hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicatingmore » its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.« less

Authors:
ORCiD logo [1];  [1];  [2];  [3];  [4]
+ Show Author Affiliations
  1. Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Mechanical Engineeirng
  2. Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Earth and Planetary Sciences
  3. Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Chemical and Biological Engineering. Center for Microengineered Materials
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1815490
Grant/Contract Number:  
89233218CNA000001; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Nanomaterials
Additional Journal Information:
Journal Volume: 11; Journal Issue: 7; Journal ID: ISSN 2079-4991
Publisher:
MDPI
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; two-dimensional materials; silicon carbide; siligraphene; semiconductors; graphene

Citation Formats

Chabi, Sakineh, Guler, Zeynel, Brearley, Adrian J., Benavidez, Angelica D., and Luk, Ting Shan. The Creation of True Two-Dimensional Silicon Carbide. United States: N. p., 2021. Web. doi:10.3390/nano11071799.
Copy to clipboard
Chabi, Sakineh, Guler, Zeynel, Brearley, Adrian J., Benavidez, Angelica D., & Luk, Ting Shan. The Creation of True Two-Dimensional Silicon Carbide. United States. https://doi.org/10.3390/nano11071799
Copy to clipboard
Chabi, Sakineh, Guler, Zeynel, Brearley, Adrian J., Benavidez, Angelica D., and Luk, Ting Shan. Thu . "The Creation of True Two-Dimensional Silicon Carbide". United States. https://doi.org/10.3390/nano11071799. https://www.osti.gov/servlets/purl/1815490.
Copy to clipboard
@article{osti_1815490,
title = {The Creation of True Two-Dimensional Silicon Carbide},
author = {Chabi, Sakineh and Guler, Zeynel and Brearley, Adrian J. and Benavidez, Angelica D. and Luk, Ting Shan},
abstractNote = {This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp3 hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.},
doi = {10.3390/nano11071799},
journal = {Nanomaterials},
number = 7,
volume = 11,
place = {United States},
year = {Thu Jul 01 00:00:00 EDT 2021},
month = {Thu Jul 01 00:00:00 EDT 2021}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.3390/nano11071799
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Strong second harmonic generation in SiC, ZnO, GaN two-dimensional hexagonal crystals from first-principles many-body calculations
journal, January 2015

  • Attaccalite, C.; Nguer, A.; Cannuccia, E.
  • Physical Chemistry Chemical Physics, Vol. 17, Issue 14
  • DOI: 10.1039/C5CP00601E

First principles many-body calculations of electronic structure and optical properties of SiC nanoribbons
journal, February 2016

Computational insights and the observation of SiC nanograin assembly: towards 2D silicon carbide
journal, June 2017

Graphene-analogous low-dimensional materials
journal, October 2013

From graphene to silicon carbide: ultrathin silicon carbide flakes
journal, January 2016

Observation of Depolarized ZnO(0001) Monolayers: Formation of Unreconstructed Planar Sheets
journal, July 2007

Potential Semiconducting and Superconducting Metastable Si 3 C Structures under Pressure
journal, January 2018

Excitonic effects in the optical properties of a SiC sheet and nanotubes
journal, August 2011

Stabilizing Graphitic Thin Films of Wurtzite Materials by Epitaxial Strain
journal, November 2011

SiC 2 Siligraphene and Nanotubes: Novel Donor Materials in Excitonic Solar Cells
journal, October 2013

  • Zhou, Liu-Jiang; Zhang, Yong-Fan; Wu, Li-Ming
  • Nano Letters, Vol. 13, Issue 11
  • DOI: 10.1021/nl403010s

Comparison of 6H-SiC, 3C-SiC, and Si for power devices
journal, March 1993

  • Bhatnagar, M.; Baliga, B. J.
  • IEEE Transactions on Electron Devices, Vol. 40, Issue 3
  • DOI: 10.1109/16.199372

First-principles study of defects and adatoms in silicon carbide honeycomb structures
journal, February 2010

Ultralight, Strong, Three-Dimensional SiC Structures
journal, November 2015

  • Chabi, Sakineh; Rocha, Victoria G.; Garcı́a-Tuñón, Esther
  • ACS Nano, Vol. 10, Issue 2
  • DOI: 10.1021/acsnano.5b05533

Self-consistent calculations for n -type hexagonal SiC inversion layers
journal, April 2004

  • Pennington, G.; Goldsman, N.
  • Journal of Applied Physics, Vol. 95, Issue 8
  • DOI: 10.1063/1.1687977

Two-dimensional topological insulators with binary honeycomb lattices: Si C 3 siligraphene and its analogs
journal, May 2014

Graphitic Nanofilms as Precursors to Wurtzite Films: Theory
journal, February 2006

A silicon carbide room-temperature single-photon source
journal, November 2013

  • Castelletto, S.; Johnson, B. C.; Ivády, V.
  • Nature Materials, Vol. 13, Issue 2
  • DOI: 10.1038/nmat3806

Ab initio study of electronic and optical behavior of two-dimensional silicon carbide
journal, January 2013

  • Lin, Xiao; Lin, Shisheng; Xu, Yang
  • Journal of Materials Chemistry C, Vol. 1, Issue 11
  • DOI: 10.1039/c3tc00629h

Large second‐order optical nonlinearities in pulsed laser ablated silicon carbide thin films
journal, November 1995

  • Lundquist, P. M.; Ong, H. C.; Lin, W. P.
  • Applied Physics Letters, Vol. 67, Issue 20
  • DOI: 10.1063/1.114842

Silicene, germanene and other group IV 2D materials
journal, January 2018

Quasi-Two-Dimensional SiC and SiC 2 : Interaction of Silicon and Carbon at Atomic Thin Lattice Plane
journal, August 2015

  • Lin, Shisheng; Zhang, Shengjiao; Li, Xiaoqiang
  • The Journal of Physical Chemistry C, Vol. 119, Issue 34
  • DOI: 10.1021/acs.jpcc.5b04113

Silicene and germanene: Silicon and germanium in the “flatland”
journal, January 2015

π-Electron systems containing Si=Si double bonds
journal, February 2018

A Stable Neutral Silaaromatic Compound, 2-{2,4,6-Tris[bis(trimethylsilyl)methyl]phenyl}- 2-silanaphthalene
journal, July 1997

  • Tokitoh, Norihiro; Wakita, Keiji; Okazaki, Renji
  • Journal of the American Chemical Society, Vol. 119, Issue 29
  • DOI: 10.1021/ja9710924

Computational designing of graphitic silicon carbide and its tubular forms
journal, January 2002

  • Miyamoto, Yoshiyuki; Yu, Byung Deok
  • Applied Physics Letters, Vol. 80, Issue 4
  • DOI: 10.1063/1.1445474

Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations
journal, October 2009

Stable solid silaethylenes
journal, October 1982

  • Brook, A. G.; Nyburg, S. C.; Abdesaken, Fereydon
  • Journal of the American Chemical Society, Vol. 104, Issue 21
  • DOI: 10.1021/ja00385a019

Influence of structure and thermodynamic stability on electronic properties of two-dimensional SiC, SiGe, and GeC alloys
journal, August 2015

Novel bonding patterns and optoelectronic properties of the two-dimensional Si x C y monolayers
journal, January 2017

  • Fan, Dong; Lu, Shaohua; Guo, Yundong
  • Journal of Materials Chemistry C, Vol. 5, Issue 14
  • DOI: 10.1039/C6TC05415C

On the existence of Si–C double bonded graphene-like layers
journal, September 2009

Silicon Carbide as a Platform for Power Electronics
journal, June 2009

Substituent Effects on the Reactivity of the Silicon−Carbon Double Bond. Substituted 1,1-Dimethylsilenes from Far-UV Laser Flash Photolysis of α-Silylketenes and (Trimethylsilyl)diazomethane
journal, May 1999

  • Leigh, William J.; Kerst, Corinna; Boukherroub, Rabah
  • Journal of the American Chemical Society, Vol. 121, Issue 20
  • DOI: 10.1021/ja984277z

Liquid-Phase Exfoliation of Phosphorene: Design Rules from Molecular Dynamics Simulations
journal, July 2015

  • Sresht, Vishnu; Pádua, Agílio A. H.; Blankschtein, Daniel
  • ACS Nano, Vol. 9, Issue 8
  • DOI: 10.1021/acsnano.5b02683

Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor
journal, November 2020

Photoluminescent two-dimensional SiC quantum dots for cellular imaging and transport
journal, January 2018

Surface Tension Components Based Selection of Cosolvents for Efficient Liquid Phase Exfoliation of 2D Materials
journal, April 2016

Tuning the indirect–direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: a quasiparticle GW study
journal, January 2012

  • Lü, Tie-Yu; Liao, Xia-Xia; Wang, Hui-Qiong
  • Journal of Materials Chemistry, Vol. 22, Issue 19
  • DOI: 10.1039/c2jm30915g

Electronic structures of SiC nanoribbons
journal, November 2008

  • Sun, Lian; Li, Yafei; Li, Zhenyu
  • The Journal of Chemical Physics, Vol. 129, Issue 17
  • DOI: 10.1063/1.3006431

The Unusual and the Expected in the Si/C Phase Diagram
journal, July 2013

  • Gao, Guoying; Ashcroft, N. W.; Hoffmann, Roald
  • Journal of the American Chemical Society, Vol. 135, Issue 31
  • DOI: 10.1021/ja405359a

Two-dimensional Silicon-Carbon Compounds: Structure Prediction and Band Structures: Two-dimensional Silicon-Carbon Compounds: Structure Prediction and Band Structures
journal, September 2017

  • Gutzler, Rico; Schön, J. Christian
  • Zeitschrift für anorganische und allgemeine Chemie, Vol. 643, Issue 21
  • DOI: 10.1002/zaac.201700258

Tuning the Optical and Electrical Properties of Few‐Layer Black Phosphorus via Physisorption of Small Solvent Molecules
journal, September 2019

An atlas of two-dimensional materials
journal, January 2014

  • Miró, Pere; Audiffred, Martha; Heine, Thomas
  • Chem. Soc. Rev., Vol. 43, Issue 18
  • DOI: 10.1039/C4CS00102H

Air-Stable Disilacyclopropene with a SiC Bond and Its Conversion to Disilacyclopropenylium Ion:  Silicon−Carbon Hybrid 2π-Electron Systems
journal, September 2007

  • Igarashi, Masayasu; Ichinohe, Masaaki; Sekiguchi, Akira
  • Journal of the American Chemical Society, Vol. 129, Issue 42
  • DOI: 10.1021/ja075740n

Strong optical nonlinearity of the nonstoichiometric silicon carbide
journal, January 2015

  • Cheng, Chih-Hsien; Wu, Chung-Lun; Lin, Yung-Hsiang
  • Journal of Materials Chemistry C, Vol. 3, Issue 39
  • DOI: 10.1039/C5TC01791B

Strain induced anisotropic mechanical and electronic properties of 2D-SiC
journal, May 2018

Optical properties of SiC nanotubes: An ab initio study
journal, July 2007

Predicting Two-Dimensional Silicon Carbide Monolayers
journal, September 2015

Light-Emitting Two-Dimensional Ultrathin Silicon Carbide
journal, February 2012

  • Lin, S. S.
  • The Journal of Physical Chemistry C, Vol. 116, Issue 6
  • DOI: 10.1021/jp210536m
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: