Bulk transport paths through defects in floating zone and Al flux grown SmB6
Abstract
We investigate the roles of disorder on low-temperature transport in SmB6 crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arise from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. In this work, we consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB6.
- Authors:
-
- Univ. of Michigan, Ann Arbor, MI (United States); Univ. of Maryland, College Park, MD (United States). Maryland Quantum Materials Center
- Univ. of Michigan, Ann Arbor, MI (United States)
- Univ. of Maryland, College Park, MD (United States). Maryland Quantum Materials Center; Johns Hopkins Univ., Baltimore, MD (United States). Inst. for Quantum Matter
- Univ. of Maryland, College Park, MD (United States). Maryland Quantum Materials Center
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Univ. of California, Irvine, CA (United States)
- Univ. of Warwick, Coventry (United Kingdom)
- Johns Hopkins Univ., Baltimore, MD (United States). Inst. for Quantum Matter
- Johns Hopkins Univ., Baltimore, MD (United States). Inst. for Quantum Matter; Johns Hopkins Univ., Baltimore, MD (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Johns Hopkins Univ., Baltimore, MD (United States). Inst. for Quantum Matter; Johns Hopkins Univ., Baltimore, MD (United States)
- Gwangju Inst. of Science and Technology (South Korea)
- Monash Univ., Melbourne, VIC (Australia); Monash Univ., Melbourne, VIC (Australia). ARC Centre of Excellence in Future Low-Energy Electronics Technologies
- Univ. of Maryland, College Park, MD (United States). Maryland Quantum Materials Center; Canadian Inst. for Advanced Research, Toronto, ON (Canada)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); Australian Research Council; Gordon and Betty Moore Foundation; Engineering and Physical Sciences Research Council (EPSRC)
- OSTI Identifier:
- 1814794
- Report Number(s):
- LA-UR-21-25492
Journal ID: ISSN 2475-9953; TRN: US2213888
- Grant/Contract Number:
- 89233218CNA000001; DGE-1256260; CE170100039; DMR-1905891; GBMF9071; EP/T005963/1; SC0019331; DMR-0320740
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; disclinations & dislocations; impurities; transport phenomena; strongly correlated systems
Citation Formats
Eo, Yun Suk, Rakoski, Alexa, Sinha, Shriya, Mihaliov, Dmitri, Fuhrman, Wesley T., Saha, Shanta R., Rosa, Priscila S., Fisk, Zachary, Hatnean, Monica Ciomaga, Balakrishnan, Geetha, Chamorro, Juan R., Phelan, W. Adam, Koohpayeh, Seyed M., McQueen, Tyrel M., Kang, Boyoun, Song, Myung-suk, Cho, Beongki, Fuhrer, Michael S., Paglione, Johnpierre, and Kurdak, Çağlıyan. Bulk transport paths through defects in floating zone and Al flux grown SmB6. United States: N. p., 2021.
Web. doi:10.1103/physrevmaterials.5.055001.
Eo, Yun Suk, Rakoski, Alexa, Sinha, Shriya, Mihaliov, Dmitri, Fuhrman, Wesley T., Saha, Shanta R., Rosa, Priscila S., Fisk, Zachary, Hatnean, Monica Ciomaga, Balakrishnan, Geetha, Chamorro, Juan R., Phelan, W. Adam, Koohpayeh, Seyed M., McQueen, Tyrel M., Kang, Boyoun, Song, Myung-suk, Cho, Beongki, Fuhrer, Michael S., Paglione, Johnpierre, & Kurdak, Çağlıyan. Bulk transport paths through defects in floating zone and Al flux grown SmB6. United States. https://doi.org/10.1103/physrevmaterials.5.055001
Eo, Yun Suk, Rakoski, Alexa, Sinha, Shriya, Mihaliov, Dmitri, Fuhrman, Wesley T., Saha, Shanta R., Rosa, Priscila S., Fisk, Zachary, Hatnean, Monica Ciomaga, Balakrishnan, Geetha, Chamorro, Juan R., Phelan, W. Adam, Koohpayeh, Seyed M., McQueen, Tyrel M., Kang, Boyoun, Song, Myung-suk, Cho, Beongki, Fuhrer, Michael S., Paglione, Johnpierre, and Kurdak, Çağlıyan. Fri .
"Bulk transport paths through defects in floating zone and Al flux grown SmB6". United States. https://doi.org/10.1103/physrevmaterials.5.055001. https://www.osti.gov/servlets/purl/1814794.
@article{osti_1814794,
title = {Bulk transport paths through defects in floating zone and Al flux grown SmB6},
author = {Eo, Yun Suk and Rakoski, Alexa and Sinha, Shriya and Mihaliov, Dmitri and Fuhrman, Wesley T. and Saha, Shanta R. and Rosa, Priscila S. and Fisk, Zachary and Hatnean, Monica Ciomaga and Balakrishnan, Geetha and Chamorro, Juan R. and Phelan, W. Adam and Koohpayeh, Seyed M. and McQueen, Tyrel M. and Kang, Boyoun and Song, Myung-suk and Cho, Beongki and Fuhrer, Michael S. and Paglione, Johnpierre and Kurdak, Çağlıyan},
abstractNote = {We investigate the roles of disorder on low-temperature transport in SmB6 crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arise from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. In this work, we consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB6.},
doi = {10.1103/physrevmaterials.5.055001},
journal = {Physical Review Materials},
number = 5,
volume = 5,
place = {United States},
year = {Fri May 07 00:00:00 EDT 2021},
month = {Fri May 07 00:00:00 EDT 2021}
}
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