Emergent properties at oxide interfaces controlled by ferroelectric polarization

Ye, Fan; Zhang, Yi; Addiego, Christopher; Xu, Mingjie; Huyan, Huaixun; Ren, Xiaobing; Pan, Xiaoqing

doi:10.1038/s41524-021-00601-w

Title: Emergent properties at oxide interfaces controlled by ferroelectric polarization

Journal Article · 15 August 2021 · npj Computational Materials

DOI: https://doi.org/10.1038/s41524-021-00601-w · OSTI ID:1813490

Ye, Fan; Zhang, Yi;

; Xu, Mingjie; Huyan, Huaixun; Ren, Xiaobing;

Abstract Ferroelectric materials are characterized by the spontaneous polarization switchable by the applied fields, which can act as a “gate” to control various properties of ferroelectric/insulator interfaces. Here we review the recent studies on the modulation of oxide hetero-/homo-interfaces by ferroelectric polarization. We discuss the potential applications of recently developed four-dimensional scanning transmission electron microscopy and how it can provide insights into the fundamental understanding of ferroelectric polarization-induced phenomena and stimulate future computational studies. Finally, we give the outlook for the potentials, the challenges, and the opportunities for the contribution of materials computation to future progress in the area.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0014430

OSTI ID:: 1813490

Journal Information:: npj Computational Materials, Journal Name: npj Computational Materials Journal Issue: 1 Vol. 7; ISSN 2057-3960

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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