Low-Threshold Epitaxially Grown 1.3- μ m InAs Quantum Dot Lasers on Patterned (001) Si

Shang, Chen; Gossard, Arthur C.; Bowers, John E.; Wan, Yating; Norman, Justin C.; Collins, Noelle; MacFarlane, Ian; Dumont, Mario; Liu, Songtao; Li, Qiang; Lau, Kei M.

doi:10.1109/JSTQE.2019.2927581

Title: Low-Threshold Epitaxially Grown 1.3- μ m InAs Quantum Dot Lasers on Patterned (001) Si

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Authors:

; Gossard, Arthur C.;

;

; Collins, Noelle; MacFarlane, Ian; Dumont, Mario; Liu, Songtao; Li, Qiang;

Publication Date:: Fri Nov 01 00:00:00 EDT 2019

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1812782

Alternate Identifier(s):: OSTI ID: 1861149

Grant/Contract Number:: 16212115; AR0000672; ITS/320/14

Resource Type:: Published Article

Journal Name:: IEEE Journal of Selected Topics in Quantum Electronics

Additional Journal Information:: Journal Name: IEEE Journal of Selected Topics in Quantum Electronics Journal Volume: 25 Journal Issue: 6; Journal ID: ISSN 1077-260X

Publisher:: Institute of Electrical and Electronics Engineers

Country of Publication:: United States

Language:: English

Citation Formats


                    Shang, Chen, Gossard, Arthur C., Bowers, John E., Wan, Yating, Norman, Justin C., Collins, Noelle, MacFarlane, Ian, Dumont, Mario, Liu, Songtao, Li, Qiang, and Lau, Kei M. Low-Threshold Epitaxially Grown 1.3- μ m InAs Quantum Dot Lasers on Patterned (001) Si.  United States: N. p., 2019. 
Web.  doi:10.1109/JSTQE.2019.2927581.

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                    Shang, Chen, Gossard, Arthur C., Bowers, John E., Wan, Yating, Norman, Justin C., Collins, Noelle, MacFarlane, Ian, Dumont, Mario, Liu, Songtao, Li, Qiang, & Lau, Kei M. Low-Threshold Epitaxially Grown 1.3- μ m InAs Quantum Dot Lasers on Patterned (001) Si.  United States.  https://doi.org/10.1109/JSTQE.2019.2927581

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                    Shang, Chen, Gossard, Arthur C., Bowers, John E., Wan, Yating, Norman, Justin C., Collins, Noelle, MacFarlane, Ian, Dumont, Mario, Liu, Songtao, Li, Qiang, and Lau, Kei M. Fri .  
"Low-Threshold Epitaxially Grown 1.3- μ m InAs Quantum Dot Lasers on Patterned (001) Si".  United States.  https://doi.org/10.1109/JSTQE.2019.2927581.

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@article{osti_1812782,

  title        = {Low-Threshold Epitaxially Grown 1.3- μ m InAs Quantum Dot Lasers on Patterned (001) Si},

  author       = {Shang, Chen and Gossard, Arthur C. and Bowers, John E. and Wan, Yating and Norman, Justin C. and Collins, Noelle and MacFarlane, Ian and Dumont, Mario and Liu, Songtao and Li, Qiang and Lau, Kei M.},

  abstractNote = {},

  doi          = {10.1109/JSTQE.2019.2927581},

  journal      = {IEEE Journal of Selected Topics in Quantum Electronics},

  number       = 6,

  volume       = 25,

  place        = {United States},

  year         = {Fri Nov 01 00:00:00 EDT 2019},

  month        = {Fri Nov 01 00:00:00 EDT 2019}

}

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