Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes
Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. Finally, we observe an etched-and-regrown junction with properties comparable to a continuously grown junction.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; 16/CJ000/10/04; NA-0003525
- OSTI ID:
- 1810369
- Report Number(s):
- SAND-2021-7527J; 697221
- Journal Information:
- IEEE Electron Device Letters, Vol. 42, Issue 7; ISSN 0741-3106
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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