Defects in Layered van der Waals Heterostructures: Implications for Thermoelectrics
Abstract
Layered van der Waals heterostructures provide extraordinary opportunities for applications such as thermoelectrics and allow for tunability of optical and electronic properties. The performance of devices made from these heterostructures will depend on their properties, which are sensitive to the nanoarchitecture (constituent layer thicknesses, layer sequence, etc.). However, performance will also be impacted by defects, which will vary in concentration and identity with the nanoarchitecture and preparation conditions. Here, we identify several types of defects and propose mechanisms for their formation, focusing on compounds in the ([SnSe]1+δ)m(TiSe2)n system prepared using the modulated elemental reactants method. The defects were observed by atomic resolution high-angle annular dark-field scanning transmission electron microscopy and can be broadly categorized into those that form domain boundaries as a result of rotational disorder from the self-assembly process and those that are layer-thickness-related and result from local or global deviations in the amount of material deposited. Furthermore, defect type and density were found to depend on the nanoarchitecture of the heterostructure. Categorizing the defects provides insights into defect formation in these van der Waals layered heterostructures and suggests strategies for controlling their concentrations. Strategies for controlling defect type and concentration are proposed, which would have implications for transportmore »
- Authors:
-
[1];
[1];
[1];
[1]
- Univ. of Oregon, Eugene, OR (United States). Materials Science Inst.
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, SNL California
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
- OSTI Identifier:
- 1810343
- Report Number(s):
- SAND-2021-8289J
Journal ID: ISSN 2574-0970; 697155
- Grant/Contract Number:
- AC04-94AL85000; DMR-1905185
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Nano Materials
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 8; Journal ID: ISSN 2574-0970
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; nanomaterials; defects; materials; microscopy; deposition; thickness; precursors; layers; nucleation
Citation Formats
Gannon, Renae N., Hamann, Danielle M., Ditto, Jeffrey, Mitchson, Gavin, Bauers, Sage R., Merrill, Devin R., Medlin, Douglas L., and Johnson, David C. Defects in Layered van der Waals Heterostructures: Implications for Thermoelectrics. United States: N. p., 2021.
Web. doi:10.1021/acsanm.1c01272.
Gannon, Renae N., Hamann, Danielle M., Ditto, Jeffrey, Mitchson, Gavin, Bauers, Sage R., Merrill, Devin R., Medlin, Douglas L., & Johnson, David C. Defects in Layered van der Waals Heterostructures: Implications for Thermoelectrics. United States. https://doi.org/10.1021/acsanm.1c01272
Gannon, Renae N., Hamann, Danielle M., Ditto, Jeffrey, Mitchson, Gavin, Bauers, Sage R., Merrill, Devin R., Medlin, Douglas L., and Johnson, David C. Thu .
"Defects in Layered van der Waals Heterostructures: Implications for Thermoelectrics". United States. https://doi.org/10.1021/acsanm.1c01272. https://www.osti.gov/servlets/purl/1810343.
@article{osti_1810343,
title = {Defects in Layered van der Waals Heterostructures: Implications for Thermoelectrics},
author = {Gannon, Renae N. and Hamann, Danielle M. and Ditto, Jeffrey and Mitchson, Gavin and Bauers, Sage R. and Merrill, Devin R. and Medlin, Douglas L. and Johnson, David C.},
abstractNote = {Layered van der Waals heterostructures provide extraordinary opportunities for applications such as thermoelectrics and allow for tunability of optical and electronic properties. The performance of devices made from these heterostructures will depend on their properties, which are sensitive to the nanoarchitecture (constituent layer thicknesses, layer sequence, etc.). However, performance will also be impacted by defects, which will vary in concentration and identity with the nanoarchitecture and preparation conditions. Here, we identify several types of defects and propose mechanisms for their formation, focusing on compounds in the ([SnSe]1+δ)m(TiSe2)n system prepared using the modulated elemental reactants method. The defects were observed by atomic resolution high-angle annular dark-field scanning transmission electron microscopy and can be broadly categorized into those that form domain boundaries as a result of rotational disorder from the self-assembly process and those that are layer-thickness-related and result from local or global deviations in the amount of material deposited. Furthermore, defect type and density were found to depend on the nanoarchitecture of the heterostructure. Categorizing the defects provides insights into defect formation in these van der Waals layered heterostructures and suggests strategies for controlling their concentrations. Strategies for controlling defect type and concentration are proposed, which would have implications for transport properties for applications in thermoelectrics.},
doi = {10.1021/acsanm.1c01272},
journal = {ACS Applied Nano Materials},
number = 8,
volume = 4,
place = {United States},
year = {Thu Jul 22 00:00:00 EDT 2021},
month = {Thu Jul 22 00:00:00 EDT 2021}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Spatially-resolved studies on the role of defects and boundaries in electronic behavior of 2D materials
journal, August 2017
- Hus, Saban M.; Li, An-Ping
- Progress in Surface Science, Vol. 92, Issue 3
van der Waals heterostructures combining graphene and hexagonal boron nitride
journal, January 2019
- Yankowitz, Matthew; Ma, Qiong; Jarillo-Herrero, Pablo
- Nature Reviews Physics, Vol. 1, Issue 2
Use of permanent marker to deposit a protection layer against FIB damage in TEM specimen preparation: USE OF PERMANENT MARKER AGAINST FIB DAMAGE
journal, June 2014
- Park, Y. C.; Park, B. C.; Romankov, S.
- Journal of Microscopy, Vol. 255, Issue 3
Superconducting properties of the misfit-layer compound (SnSe)1.18(TiSe2) 2: Superconducting properties of (SnSe)1.18(TiSe2) 2
journal, March 2016
- Song, Yoo Jang; Kim, Min Jae; Jung, Wan Gil
- physica status solidi (b), Vol. 253, Issue 8
Investigating the Formation of MoSe 2 and TiSe 2 Films from Artificially Layered Precursors
journal, August 2020
- Miller, Aaron M.; Hamann, Danielle M.; Hadland, Erik C.
- Inorganic Chemistry, Vol. 59, Issue 17
Structural Changes as a Function of Thickness in [(SnSe) 1+δ ] m TiSe 2 Heterostructures
journal, January 2018
- Hamann, Danielle M.; Lygo, Alexander C.; Esters, Marco
- ACS Nano, Vol. 12, Issue 2
2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications
journal, December 2016
- Lin, Zhong; McCreary, Amber; Briggs, Natalie
- 2D Materials, Vol. 3, Issue 4
Electronic structure of designed [(SnSe)1+δ]m[TiSe2]2 heterostructure thin films with tunable layering sequence
journal, April 2019
- Göhler, Fabian; Hamann, Danielle M.; Rösch, Niels
- Journal of Materials Research, Vol. 34, Issue 12
Misfit Layer Compounds and Ferecrystals: Model Systems for Thermoelectric Nanocomposites
journal, April 2015
- Merrill, Devin; Moore, Daniel; Bauers, Sage
- Materials, Vol. 8, Issue 4
Cross-Plane Seebeck Coefficient Measurement of Misfit Layered Compounds (SnSe) n (TiSe 2 ) n ( n = 1,3,4,5)
journal, February 2017
- Li, Zhen; Bauers, Sage R.; Poudel, Nirakar
- Nano Letters, Vol. 17, Issue 3
The high temperature structure of β-SnS and β-SnSe and the B16-to-B33 type λ-transition path
journal, January 1981
- Schnering, Hans Georg von; Wiedemeier, Heribert
- Zeitschrift für Kristallographie - Crystalline Materials, Vol. 156, Issue 1-2
Defects Engineering with Multiple Dimensions in Thermoelectric Materials
journal, May 2020
- Zhao, Chenxi; Li, Zhou; Fan, Tianjiao
- Research, Vol. 2020
Amorphous sulfide heterostructure precursors prepared by radio frequency sputtering
journal, September 2019
- Roberts, Dennice M.; Perkins, John D.; Norman, Andrew G.
- Journal of Vacuum Science & Technology B, Vol. 37, Issue 5
Graphene based heterostructures
journal, August 2012
- Dean, C.; Young, A. F.; Wang, L.
- Solid State Communications, Vol. 152, Issue 15
Growth and Grain Boundaries in 2D Materials
journal, July 2020
- Yao, Wenqian; Wu, Bin; Liu, Yunqi
- ACS Nano, Vol. 14, Issue 8
Influence of Nanoarchitecture on Charge Donation and the Electrical-Transport Properties in [(SnSe) 1+δ ][TiSe 2 ] q Heterostructures
journal, June 2020
- Hamann, Danielle M.; Bardgett, Dylan; Bauers, Sage R.
- Chemistry of Materials, Vol. 32, Issue 13
2D materials and van der Waals heterostructures
journal, July 2016
- Novoselov, K. S.; Mishchenko, A.; Carvalho, A.
- Science, Vol. 353, Issue 6298
Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities
journal, December 2019
- Jiang, Jie; Xu, Tao; Lu, Junpeng
- Research, Vol. 2019
Recent development of two-dimensional transition metal dichalcogenides and their applications
journal, April 2017
- Choi, Wonbong; Choudhary, Nitin; Han, Gang Hee
- Materials Today, Vol. 20, Issue 3
Synthesis of Tunable SnS-TaS 2 Nanoscale Superlattices
journal, September 2020
- Roberts, Dennice M.; Bardgett, Dylan; Gorman, Brian P.
- Nano Letters, Vol. 20, Issue 10
The Synthesis, Structure, and Electrical Characterization of (SnSe) 1.2 TiSe 2
journal, November 2014
- Merrill, Devin R.; Moore, Daniel B.; Ditto, Jeffrey
- European Journal of Inorganic Chemistry, Vol. 2015, Issue 1
Chalcogenide misfit layer compounds
journal, October 1995
- Rouxel, J.; Meerschaut, A.; Wiegers, G. A.
- Journal of Alloys and Compounds, Vol. 229, Issue 1
An Open Canvas—2D Materials with Defects, Disorder, and Functionality
journal, December 2014
- Zou, Xiaolong; Yakobson, Boris I.
- Accounts of Chemical Research, Vol. 48, Issue 1
Long-Range Order in [(SnSe) 1.2 ] 1 [TiSe 2 ] 1 Prepared from Designed Precursors
journal, March 2017
- Hamann, Danielle M.; Merrill, Devin R.; Bauers, Sage R.
- Inorganic Chemistry, Vol. 56, Issue 6
Neutron diffraction study of the structural phase transition in SnS and SnSe
journal, January 1986
- Chattopadhyay, T.; Pannetier, J.; Von Schnering, H. G.
- Journal of Physics and Chemistry of Solids, Vol. 47, Issue 9, p. 879-885
Influence of selenium vapor postannealing on the electrical transport properties of PbSe–WSe 2 nanolaminates
journal, April 2011
- Lin, Qiyin; Tepfer, Sara; Heideman, Colby
- Journal of Materials Research, Vol. 26, Issue 15
Sample preparation for atomic-resolution STEM at low voltages by FIB
journal, March 2012
- Schaffer, Miroslava; Schaffer, Bernhard; Ramasse, Quentin
- Ultramicroscopy, Vol. 114
Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
journal, January 2016
- Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei
- Journal of Materials Research, Vol. 31, Issue 7
In-plane structure of ferecrystalline compounds: In-plane structure of ferecrystalline compounds
journal, May 2015
- Falmbigl, Matthias; Alemayehu, Matti B.; Merrill, Devin R.
- Crystal Research and Technology, Vol. 50, Issue 6