Pulsed laser deposition nickel oxide on crystalline silicon as hole selective contacts

Journal Article · 31 December 2019 · Journal of Vacuum Science and Technology B

DOI: https://doi.org/10.1116/1.5124840 · OSTI ID:1804029

Zhao, Jing  ^[1]; Ho-Baillie, Anita ^[2]; Bremner, Stephen P. ^[2]

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1. Univ. of New South Wales, Sydney, NSW (Australia); University of New South Wales, Sydney, Australia
2. Univ. of New South Wales, Sydney, NSW (Australia)

In this work, the authors report the use of pulsed laser deposition to fabricate nickel oxide layers on silicon and assess the applicability of this structure as a hole selective contact. Films were deposited at temperatures of 300, 500, 700, and 900 °C. Results from reflective high energy electron diffraction patterns indicate increasing crystallinity with temperature up to 500 °C. However, layers deposited at 900 °C are amorphous. Nevertheless, results from atomic force microscopy, contact resistance measurements, and photoluminescence lifetime imaging indicate that films deposited at 900 °C have the best film smoothness, lowest specific contact resistivity, and highest lifetimes, and therefore, they are best suited for hole selective contact applications. Kelvin probe force microscopy and x-ray photoelectron spectroscopy were also carried out to study the effects of deposition temperature.

• Research Organization: Arizona State Univ., Tempe, AZ (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• Grant/Contract Number: EE0006335
• OSTI ID: 1804029
• Journal Information: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 1 Vol. 38; ISSN 2166-2746
• Publisher: American Vacuum Society / AIPCopyright Statement
• Country of Publication: United States
• Language: English