Many-body renormalization of the electron effective mass of InSe

Li, Wenbin; Giustino, Feliciano

doi:10.1103/physrevb.101.035201

Title: Many-body renormalization of the electron effective mass of InSe

Journal Article · 12 January 2020 · Physical Review B

DOI: https://doi.org/10.1103/physrevb.101.035201 · OSTI ID:1803909

^[1]; Giustino, Feliciano ^[2]

Westlake Univ., Hangzhou (China); Univ. of Oxford (United Kingdom); OSTI
Univ. of Texas, Austin, TX (United States); Univ. of Oxford (United Kingdom)

The layered semiconductor InSe has a wide range of attractive electronic and optoelectronic properties, in which the effective mass of the charge carriers plays a key role. Here, we study from first principles the many-body renormalization of the electron effective mass in γ-InSe, taking into account the effects of both electron-electron and electron-phonon interactions. Electron-electron interaction, treated within the many-body $$\textit{GW}$$ approximation, leads to around 15% of the increase in the in-plane effective mass over the result from density functional theory, and a more than threefold increase in the out-of-plane electron effective mass. The surprisingly large directional anisotropy in the mass renormalization is explained in terms of the symmetries of band-edge wave functions. In this work, the mass enhancement induced by electron-phonon interactions, which we find to mainly originate from Fröhlich electron-phonon coupling, is less than 10% at room temperature, indicating weak polaronic effect. After including the many-body renormalization effects, the calculated electron effective masses of InSe are 0.12 and 0.09 in the in-plane and out-of-plane directions, respectively.

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Research Organization:: Univ. of Texas, Austin, TX (United States)

Sponsoring Organization:: European Union’s Horizon 2020; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0020129

OSTI ID:: 1803909

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 3 Vol. 101; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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