Stacking Independence and Resonant Interlayer Excitation of Monolayer WSe2/MoSe2 Heterostructures for Photocatalytic Energy Conversion

Chen, Jihan; Bailey, Connor S.; Cui, Dingzhou; Wang, Yu; Wang, Bo; Shi, Haotian; Cai, Zhi; Pop, Eric; Zhou, Chongwu; Cronin, Stephen B.

doi:10.1021/acsanm.9b01898

Title: Stacking Independence and Resonant Interlayer Excitation of Monolayer WSe₂/MoSe₂ Heterostructures for Photocatalytic Energy Conversion

Journal Article · 24 January 2020 · ACS Applied Nano Materials

DOI: https://doi.org/10.1021/acsanm.9b01898 · OSTI ID:1803682

^[1]; Bailey, Connor S. ^[2]; Cui, Dingzhou ^[3];

^[3];

^[3]; Shi, Haotian ^[3]; Cai, Zhi ^[3];

^[2];

^[3]; Cronin, Stephen B. ^[3]

Univ. of Southern California, Los Angeles, CA (United States); OSTI
Stanford Univ., CA (United States)
Univ. of Southern California, Los Angeles, CA (United States)

Here, we report a comparison of the photocatalytic performance of WSe₂-on-MoSe₂ and MoSe₂-on-WSe₂ heterostructures. While built-in electric fields exist in these heterostructures on the order of 100 kV/cm due to band offsets between these two materials, the photocatalytic performance (i.e., photocurrent) is independent of the stacking order of the two materials. Solving Poisson’s equation under these conditions, we find that the built-in electric field produced in the heterostructure is at least 1 order of magnitude smaller than that produced in the electrochemical double layer (i.e., Helmholtz layer). Mott–Schottky measurements indicate that transition metal dichalcogenides (TMDCs) on ITO electrodes have similar capacitance to that of bare ITO, providing further evidence that the interfacial electric fields produced in the solid state heterostructure are negligible compared to the fields generated by the ions in solution. The photocatalytic performance of these heterostructures provided the largest relative enhancement in the heterojunction region under 920 and 785 nm irradiation compared with 532 and 633 nm wavelength excitation. Here, the 920 nm (1.35 eV) photons lie below the band gaps and produce very little photocurrent in the constituent monolayer materials but resonantly excite the interlayer optical transition in the heterostructure, producing a 5-fold enhancement in the measured photocurrent.

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Research Organization:: Univ. of Southern California, Los Angeles, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); US Army Research Office (ARO); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0019322

OSTI ID:: 1803682

Journal Information:: ACS Applied Nano Materials, Journal Name: ACS Applied Nano Materials Journal Issue: 2 Vol. 3; ISSN 2574-0970

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Stacking Independence and Resonant Interlayer Excitation of Monolayer WSe2/MoSe2 Heterostructures for Photocatalytic Energy Conversion

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Title: Stacking Independence and Resonant Interlayer Excitation of Monolayer WSe₂/MoSe₂ Heterostructures for Photocatalytic Energy Conversion