Understanding chemical and physical mechanisms in atomic layer deposition

Richey, Nathaniel E.; de Paula, Camila; Bent, Stacey F.

doi:10.1063/1.5133390

Title: Understanding chemical and physical mechanisms in atomic layer deposition

Journal Article · 21 January 2020 · Journal of Chemical Physics

DOI: https://doi.org/10.1063/1.5133390 · OSTI ID:1801604

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Stanford Univ., CA (United States); OSTI
Stanford Univ., CA (United States)

Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from “ideal” film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters.

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Research Organization:: Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: SC0004782

OSTI ID:: 1801604

Journal Information:: Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 4 Vol. 152; ISSN 0021-9606

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Plasma enhanced atomic layer deposition of Fe 2 O 3 thin films Ramachandran, Ranjith K.; Dendooven, Jolien; Detavernier, Christophe J. Mater. Chem. A, Vol. 2, Issue 27 https://doi.org/10.1039/c4ta01486c	journal	January 2014
Atomic layer deposition of ruthenium at 100 °C using the RuO 4 -precursor and H 2 Minjauw, Matthias M.; Dendooven, Jolien; Capon, Boris Journal of Materials Chemistry C, Vol. 3, Issue 1 https://doi.org/10.1039/c4tc01961j	journal	January 2015
First principles study of the atomic layer deposition of alumina by TMA–H ₂ O-process Weckman, Timo; Laasonen, Kari Physical Chemistry Chemical Physics, Vol. 17, Issue 26 https://doi.org/10.1039/c5cp01912e	journal	January 2015
Key role of surface oxidation and reduction processes in the coarsening of Pt nanoparticles Solano, Eduardo; Dendooven, Jolien; Ramachandran, Ranjith K. Nanoscale, Vol. 9, Issue 35 https://doi.org/10.1039/c7nr04278g	journal	January 2017
Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO 2 films obtained from metal halide and amide precursors Oh, Il-Kwon; Park, Bo-Eun; Seo, Seunggi Journal of Materials Chemistry C, Vol. 6, Issue 27 https://doi.org/10.1039/c8tc01476k	journal	January 2018
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Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process Puurunen, Riikka L. Journal of Applied Physics, Vol. 97, Issue 12, Article No. 121301 https://doi.org/10.1063/1.1940727	journal	June 2005
Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications Yim, Sung-Soo; Lee, Moon-Sang; Kim, Ki-Su Applied Physics Letters, Vol. 89, Issue 9 https://doi.org/10.1063/1.2338793	journal	August 2006
Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition Yim, Sung-Soo; Lee, Do-Joong; Kim, Ki-Su Journal of Applied Physics, Vol. 103, Issue 11 https://doi.org/10.1063/1.2938052	journal	June 2008
Kinetics of phase transitions: Theory of Ostwald ripening Marqusee, J. A.; Ross, John The Journal of Chemical Physics, Vol. 79, Issue 1 https://doi.org/10.1063/1.445532	journal	July 1983
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko Journal of Applied Physics, Vol. 113, Issue 2, Article No. 021301 https://doi.org/10.1063/1.4757907	journal	January 2013
Size-dependent mobility of gold nano-clusters during growth on chemically modified graphene Bell, Gavin R.; Dawson, Peter M.; Pandey, Priyanka A. APL Materials, Vol. 2, Issue 1 https://doi.org/10.1063/1.4862696	journal	January 2014
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Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD Lemaire, Paul C.; King, Mariah; Parsons, Gregory N. The Journal of Chemical Physics, Vol. 146, Issue 5 https://doi.org/10.1063/1.4967811	journal	February 2017
Surface chemistry of group 11 atomic layer deposition precursors on silica using solid-state nuclear magnetic resonance spectroscopy Pallister, Peter J.; Barry, Seán T. The Journal of Chemical Physics, Vol. 146, Issue 5 https://doi.org/10.1063/1.4968021	journal	February 2017
Classification of processes for the atomic layer deposition of metals based on mechanistic information from density functional theory calculations Elliott, S. D.; Dey, G.; Maimaiti, Y. The Journal of Chemical Physics, Vol. 146, Issue 5 https://doi.org/10.1063/1.4975085	journal	February 2017
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Oxide-supported metal clusters: models for heterogeneous catalysts Santra, A. K.; Goodman, D. W. Journal of Physics: Condensed Matter, Vol. 15, Issue 2 https://doi.org/10.1088/0953-8984/15/2/202	journal	December 2002
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Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation Mackus, Adriaan J. M.; Weber, Matthieu J.; Thissen, Nick F. W. Nanotechnology, Vol. 27, Issue 3 https://doi.org/10.1088/0957-4484/27/3/034001	journal	December 2015
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Revisiting the growth mechanism of atomic layer deposition of Al 2 O 3 : A vibrational sum-frequency generation study Vandalon, Vincent; Kessels, W. M. M. (Erwin) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 5 https://doi.org/10.1116/1.4993597	journal	September 2017
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