Growth of PdCoO2 by ozone-assisted molecular-beam epitaxy
- Cornell Univ., Ithaca, NY (United States). Dept. of Materials Sciences and Engineering; OSTI
- Cornell Univ., Ithaca, NY (United States). Dept. of Materials Sciences and Engineering
- Cornell Univ., Ithaca, NY (United States). Dept. of Physics
- Cornell Univ., Ithaca, NY (United States). Dept. of Materials Sciences and Engineering and Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM)
- Peter Grünberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, Jülich (Germany)
- Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics; Kavli Inst. at Cornell for Nanoscale Science, Ithaca, NY (United States)
- Cornell Univ., Ithaca, NY (United States). Dept. of Materials Sciences and Engineering; Kavli Inst. at Cornell for Nanoscale Science, Ithaca, NY (United States)
We report the in situ, direct epitaxial synthesis of (0001)-oriented PdCoO2 thin films on c-plane sapphire using ozone-assisted molecular-beam epitaxy. The resulting films have smoothness, structural perfection, and electrical characteristics that rival the best in situ grown PdCoO2 thin films in the literature. Metallic conductivity is observed in PdCoO2 films as thin as ~2.0 nm. The PdCoO2 films contain 180° in-plane rotation twins. Scanning transmission electron microscopy reveals that the growth of PdCoO2 on the (0001) surface of Al2O3 begins with the CoO2 layer.
- Research Organization:
- Cornell Univ., Ithaca, NY (United States)
- Sponsoring Organization:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- Grant/Contract Number:
- SC0002334
- OSTI ID:
- 1801570
- Journal Information:
- APL Materials, Journal Name: APL Materials Journal Issue: 12 Vol. 7; ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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