Title: Transition from intrinsic to extrinsic anomalous Hall effect in the ferromagnetic Weyl semimetal PrAlGe_1-xSi_x

Abstract

Recent reports of a large anomalous Hall effect (AHE) in ferromagnetic Weyl semimetals (FM WSMs) have led to a resurgence of interest in this enigmatic phenomenon. However, due to a lack of tunable materials, the interplay between the intrinsic mechanism caused by Berry curvature and extrinsic mechanisms due to scattering remains unclear in FM WSMs. In this contribution, we present a thorough investigation of both the extrinsic and intrinsic AHEs in a new family of FM WSMs, PrAlGe_1-xSi_x, where x can be tuned continuously. Based on the first-principles calculations, we show that the two end members, PrAlGe and PrAlSi, have different Fermi surfaces, but similar Weyl node structures. Experimentally, we observe moderate changes in the anomalous Hall coefficient (R_S), but significant changes in the ordinary Hall coefficient (R₀) in PrAlGe_1-xSi_x as a function of x. By comparing the magnitude of R₀ and R_S, we identify two regimes: |R₀| < |R_S| for x ≤ 0.5 and |R₀| > |R_S| for x > 0.5. Through a detailed scaling analysis, we uncover a universal anomalous Hall conductivity (AHC) from intrinsic contribution when x ≤ 0.5. Such a universal AHC is absent for x > 0.5. Our study, thus, reveals the significance of extrinsicmore » mechanisms in FM WSMs and reports the first observation of the transition from the intrinsic to extrinsic AHE in PrAlGe_1-xSi_x.« less

Authors:

Yang, Hung-Yu  ^[1];

• Search DOE PAGES for author "Yang, Hung-Yu"
• Search DOE PAGES for ORCID "0000-0002-4737-9826"

Singh, Bahadur  ^[2];

• Search DOE PAGES for author "Singh, Bahadur"
• Search DOE PAGES for ORCID "0000-0002-2013-1126"

Lu, Baozhu ^[3]; Huang, Cheng-Yi ^[4]; Bahrami, Faranak ^[1]; Chiu, Wei-Chi  ^[5];

• Search DOE PAGES for author "Chiu, Wei-Chi"
• Search DOE PAGES for ORCID "0000-0002-6147-9743"

Graf, David ^[6]; Huang, Shin-Ming ^[7]; Wang, Baokai ^[5]; Lin, Hsin ^[4]; Torchinsky, Darius ^[3]; Bansil, Arun ^[5]; Tafti, Fazel  ^[1]

• Search DOE PAGES for author "Tafti, Fazel"
• Search DOE PAGES for ORCID "0000-0002-5723-4604"

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+ Show Author Affiliations

1. Boston College, Chestnut Hill, MA (United States). Dept. of Physics
2. Northeastern Univ., Boston, MA (United States). Dept. of Physics; Shenzhen Univ. (China)
3. Temple Univ., Philadelphia, PA (United States). Dept. of Physics and Temple Materials Institute
4. Academia Sinica, Taipei (Taiwan). Inst. of Physics
5. Northeastern Univ., Boston, MA (United States). Dept. of Physics
6. National High Magnetic Field Lab., Tallahassee, FL (United States)
7. National Sun Yat-sen Univ., Kaohsiung (Taiwan). Dept. of Physics

Publication Date:

Thu Jan 16 00:00:00 EST 2020

Research Org.:

Northeastern Univ., Boston, MA (United States); Univ. of California, Oakland, CA (United States)

Sponsoring Org.:

USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:

1800447

Alternate Identifier(s):

OSTI ID: 1591964

Grant/Contract Number:  

FG02-07ER46352; AC02-05CH11231; AC02- 05CH11231

Resource Type:

Accepted Manuscript

Journal Name:

APL Materials

Additional Journal Information:

Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2166-532X

Publisher:

American Institute of Physics (AIP)

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; Crystallography; Thermodynamic properties; Fermi surface; Energy dispersive X-ray spectroscopy; Second harmonic generation; Crystal lattices; Hall effect; Weyl semimetal; Density functional theory; Electronic band structure