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Title: Carrier mobilities of (001) cadmium arsenide films

Abstract

We investigate (001)-oriented films of the topological semimetal cadmium arsenide (Cd3As2) grown by molecular beam epitaxy on lattice-matched III–V AlxIn1-xSb buffer layers. Magnetotransport studies and analysis of thin film microstructures are used to determine the influence of dislocations on their carrier mobilities. We show that only a minority of the threading dislocations present in the buffer layers extend into the Cd3As2 films. Threading dislocations are shown to reduce the mobilities of carriers residing in the topological surface states, while bulk transport was unaffected by a change in the dislocation density across an order of magnitude. Thick (001) Cd3As2 films exhibit electron mobilities of up to 41 000 cm2 V-1 s-1 at 2 K. The results provide insights into the influence of extended defects on the transport properties of a prototype topological semimetal.

Authors:
 [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [2];  [1]
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  1. Univ. of California, Santa Barbara, CA (United States). Materials Dept.
  2. Univ. of California, Santa Barbara, CA (United States). Materials Dept. and Dept. of Physics
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1800057
Alternate Identifier(s):
OSTI ID: 1617254
Grant/Contract Number:  
FG02-02ER45994; DMR 1720256; DEFG02-02ER45994
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 8; Journal Issue: 5; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Thin films; Semimetals; Electronic transport; Crystal lattices; Scattering; Hall effect; Epitaxy; Arsenide; Crystallographic defects

Citation Formats

Goyal, Manik, Salmani-Rezaie, Salva, Pardue, Tyler N., Guo, Binghao, Kealhofer, David A., and Stemmer, Susanne. Carrier mobilities of (001) cadmium arsenide films. United States: N. p., 2020. Web. doi:10.1063/5.0002771.
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Goyal, Manik, Salmani-Rezaie, Salva, Pardue, Tyler N., Guo, Binghao, Kealhofer, David A., & Stemmer, Susanne. Carrier mobilities of (001) cadmium arsenide films. United States. https://doi.org/10.1063/5.0002771
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Goyal, Manik, Salmani-Rezaie, Salva, Pardue, Tyler N., Guo, Binghao, Kealhofer, David A., and Stemmer, Susanne. Tue . "Carrier mobilities of (001) cadmium arsenide films". United States. https://doi.org/10.1063/5.0002771. https://www.osti.gov/servlets/purl/1800057.
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@article{osti_1800057,
title = {Carrier mobilities of (001) cadmium arsenide films},
author = {Goyal, Manik and Salmani-Rezaie, Salva and Pardue, Tyler N. and Guo, Binghao and Kealhofer, David A. and Stemmer, Susanne},
abstractNote = {We investigate (001)-oriented films of the topological semimetal cadmium arsenide (Cd3As2) grown by molecular beam epitaxy on lattice-matched III–V AlxIn1-xSb buffer layers. Magnetotransport studies and analysis of thin film microstructures are used to determine the influence of dislocations on their carrier mobilities. We show that only a minority of the threading dislocations present in the buffer layers extend into the Cd3As2 films. Threading dislocations are shown to reduce the mobilities of carriers residing in the topological surface states, while bulk transport was unaffected by a change in the dislocation density across an order of magnitude. Thick (001) Cd3As2 films exhibit electron mobilities of up to 41 000 cm2 V-1 s-1 at 2 K. The results provide insights into the influence of extended defects on the transport properties of a prototype topological semimetal.},
doi = {10.1063/5.0002771},
journal = {APL Materials},
number = 5,
volume = 8,
place = {United States},
year = {Tue May 05 00:00:00 EDT 2020},
month = {Tue May 05 00:00:00 EDT 2020}
}
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https://doi.org/10.1063/5.0002771
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