Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

Klump, A.; Hoffmann, M. P.; Kaess, F.; Tweedie, J.; Reddy, P.; Kirste, R.; Sitar, Z.; Collazo, R.

doi:10.1063/1.5126004

Title: Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

Journal Article · 21 January 2020 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5126004 · OSTI ID:1798992

^[1]; Hoffmann, M. P. ^[2];

^[2]; Tweedie, J. ^[3];

^[3]; Kirste, R. ^[3];

^[4]; Collazo, R. ^[2]

North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering; OSTI
North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
Adroit Materials, Inc., Cary, NC (United States)
North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering; Adroit Materials, Inc., Cary, NC (United States)

A defect quasi Fermi level (dQFL) control process based on above bandgap illumination was applied to control H and V_N-complexes, which are the main contributors to the passivation and self-compensation, respectively, in Mg:GaN grown via metalorganic chemical vapor deposition. Secondary ion mass spectrometry measurements confirmed that the total Mg incorporation was unaffected by the process. However, the total H concentration was reduced to similar levels obtained by post-growth thermal activation prior to any annealing treatment. Similarly, the 2.8 eV emission in the photoluminescence spectra, attributed to compensating V_N and its complexes, was reduced for the dQFL-process samples. After thermal activation and Ni/Au contact deposition, Hall effect measurements revealed lower resistivities (increased mobilities and free hole concentrations) for dQFL-grown samples with Mg doping concentrations above and below 2 × 10¹⁹ cm^-3. All these results demonstrate that the dQFL process can effectively reduce the H-passivation and self-compensation of the Mg:GaN films.

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Research Organization:: Adroit Materials, Cary, NC (United States); HexaTech, Raleigh, NC (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Engineering & Technology. Office of Small Business Innovation Research (SBIR) and Small Business Technology Transfer (STTR) Programs

Grant/Contract Number:: AR0000299; SC0011883

OSTI ID:: 1798992

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 127; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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