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Title: A quaternary Laves-type phase in Ag-Cu-In-Ga thin films

Abstract

Formation of a new quaternary Laves-type phase in sputter-deposited and evaporated thin films of Ag-Cu-In-Ga (ACIG) is reported. Films with different compositions are analyzed by energy dispersive x-ray spectroscopy and x-ray diffraction to determine composition and structure based on Rietveld whole pattern refinement. Annealing and partial reaction with H2Se are used to study the phase. The quaternary phase corresponds to (Cu1-xGax)2(AgyIn1-y) with x ≈ 0.2 and ≈ 0.3. It has a Cu2Mg-type crystal structure with space group of Fd$$\bar{3}$$m and lattice parameter of 7.090. Finally, formation of this phase is reported in the composition range (Ag + Cu)/(In + Ga) ≈ 0.8–0.9 suitable for precursors to the formation of chalcopyrite thin films for photovoltaic application.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]
  1. Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion
Publication Date:
Research Org.:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1780900
Alternate Identifier(s):
OSTI ID: 1550579
Grant/Contract Number:  
EE0007542; EE0005407
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Alloys and Compounds
Additional Journal Information:
Journal Volume: 710; Journal ID: ISSN 0925-8388
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; Laves-type phases; Crystal structures; Thin films; Photovoltaic applications

Citation Formats

Soltanmohammad, Sina, McCandless, Brian, and Shafarman, William N. A quaternary Laves-type phase in Ag-Cu-In-Ga thin films. United States: N. p., 2017. Web. doi:10.1016/j.jallcom.2017.03.228.
Soltanmohammad, Sina, McCandless, Brian, & Shafarman, William N. A quaternary Laves-type phase in Ag-Cu-In-Ga thin films. United States. doi:https://doi.org/10.1016/j.jallcom.2017.03.228
Soltanmohammad, Sina, McCandless, Brian, and Shafarman, William N. Sat . "A quaternary Laves-type phase in Ag-Cu-In-Ga thin films". United States. doi:https://doi.org/10.1016/j.jallcom.2017.03.228. https://www.osti.gov/servlets/purl/1780900.
@article{osti_1780900,
title = {A quaternary Laves-type phase in Ag-Cu-In-Ga thin films},
author = {Soltanmohammad, Sina and McCandless, Brian and Shafarman, William N.},
abstractNote = {Formation of a new quaternary Laves-type phase in sputter-deposited and evaporated thin films of Ag-Cu-In-Ga (ACIG) is reported. Films with different compositions are analyzed by energy dispersive x-ray spectroscopy and x-ray diffraction to determine composition and structure based on Rietveld whole pattern refinement. Annealing and partial reaction with H2Se are used to study the phase. The quaternary phase corresponds to (Cu1-xGax)2(AgyIn1-y) with x ≈ 0.2 and ≈ 0.3. It has a Cu2Mg-type crystal structure with space group of Fd$\bar{3}$m and lattice parameter of 7.090. Finally, formation of this phase is reported in the composition range (Ag + Cu)/(In + Ga) ≈ 0.8–0.9 suitable for precursors to the formation of chalcopyrite thin films for photovoltaic application.},
doi = {10.1016/j.jallcom.2017.03.228},
journal = {Journal of Alloys and Compounds},
number = ,
volume = 710,
place = {United States},
year = {2017},
month = {7}
}

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