Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material
Abstract
Exploring new two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we report successful growth of AlSb in the double-layer honeycomb (DLHC) structure, a 2D vdW material which has no direct analogue to its 3D bulk and is predicted kinetically stable when freestanding. The structural morphology and electronic structure of the experimental 2D AlSb are characterized with spectroscopic imaging scanning tunneling microscopy and cross-sectional imaging scanning transmission electron microscopy, which compare well to the proposed DLHC structure. The 2D AlSb exhibits a bandgap of 0.93 eV versus the predicted 1.06 eV, which is substantially smaller than the 1.6 eV of bulk. We also attempt the less-stable InSb DLHC structure; however, it grows into bulk islands instead. Here, the successful growth of a DLHC material here opens the door for the realization of a large family of novel 2D DLHC traditional semiconductors with unique excitonic, topological, and electronic properties.
- Authors:
-
[1];
[4];
[2];
[1]
- Huazhong Univ. of Science and Technology, Wuhan (China)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Chinese Academy of Sciences (CAS), Beijing (China)
- Chinese Academy of Sciences (CAS), Beijing (China); Univ. of Chinese Academy of Sciences, Beijing (China); Songshan Lake Materials Lab., Guangdong (China)
- Publication Date:
- Research Org.:
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key Research and Development Program of China; National Science Foundation of China
- OSTI Identifier:
- 1773773
- Alternate Identifier(s):
- OSTI ID: 1831771
- Grant/Contract Number:
- SC0002623; AC02-05CH11231; 2017YFA0403501; 2016YFA0401003; 2018YFA0307000; 11874161; U20A6002; 11774105; 52025025; 52072400
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 15; Journal Issue: 5; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; two-dimensional material; molecular beam epitaxy; scanning tunneling microscopy; AlSb; InSb; density functional theory; double-layer honeycomb
Citation Formats
Qin, Le, Zhang, Zhi-Hao, Jiang, Zeyu, Fan, Kai, Zhang, Wen-Hao, Tang, Qiao-Yin, Xia, Hui-Nan, Meng, Fanqi, Zhang, Qinghua, Gu, Lin, West, Damien, Zhang, Shengbai, and Fu, Ying-Shuang. Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material. United States: N. p., 2021.
Web. doi:10.1021/acsnano.1c00470.
Qin, Le, Zhang, Zhi-Hao, Jiang, Zeyu, Fan, Kai, Zhang, Wen-Hao, Tang, Qiao-Yin, Xia, Hui-Nan, Meng, Fanqi, Zhang, Qinghua, Gu, Lin, West, Damien, Zhang, Shengbai, & Fu, Ying-Shuang. Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material. United States. https://doi.org/10.1021/acsnano.1c00470
Qin, Le, Zhang, Zhi-Hao, Jiang, Zeyu, Fan, Kai, Zhang, Wen-Hao, Tang, Qiao-Yin, Xia, Hui-Nan, Meng, Fanqi, Zhang, Qinghua, Gu, Lin, West, Damien, Zhang, Shengbai, and Fu, Ying-Shuang. Tue .
"Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material". United States. https://doi.org/10.1021/acsnano.1c00470. https://www.osti.gov/servlets/purl/1773773.
@article{osti_1773773,
title = {Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material},
author = {Qin, Le and Zhang, Zhi-Hao and Jiang, Zeyu and Fan, Kai and Zhang, Wen-Hao and Tang, Qiao-Yin and Xia, Hui-Nan and Meng, Fanqi and Zhang, Qinghua and Gu, Lin and West, Damien and Zhang, Shengbai and Fu, Ying-Shuang},
abstractNote = {Exploring new two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we report successful growth of AlSb in the double-layer honeycomb (DLHC) structure, a 2D vdW material which has no direct analogue to its 3D bulk and is predicted kinetically stable when freestanding. The structural morphology and electronic structure of the experimental 2D AlSb are characterized with spectroscopic imaging scanning tunneling microscopy and cross-sectional imaging scanning transmission electron microscopy, which compare well to the proposed DLHC structure. The 2D AlSb exhibits a bandgap of 0.93 eV versus the predicted 1.06 eV, which is substantially smaller than the 1.6 eV of bulk. We also attempt the less-stable InSb DLHC structure; however, it grows into bulk islands instead. Here, the successful growth of a DLHC material here opens the door for the realization of a large family of novel 2D DLHC traditional semiconductors with unique excitonic, topological, and electronic properties.},
doi = {10.1021/acsnano.1c00470},
journal = {ACS Nano},
number = 5,
volume = 15,
place = {United States},
year = {Tue Mar 16 00:00:00 EDT 2021},
month = {Tue Mar 16 00:00:00 EDT 2021}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
journal, June 2017
- Reis, F.; Li, G.; Dudy, L.
- Science, Vol. 357, Issue 6348
Buckled two-dimensional Xene sheets
journal, January 2017
- Molle, Alessandro; Goldberger, Joshua; Houssa, Michel
- Nature Materials, Vol. 16, Issue 2
Analysis of GaSb and AlSb reconstructions on GaSb(111) - and -oriented surfaces by azimuthal-scan reflection high-energy electron diffraction
journal, April 2011
- Proessdorf, Andre; Grosse, Frank; Braun, Wolfgang
- Physical Review B, Vol. 83, Issue 15
Efficient hybrid density functional calculations in solids: Assessment of the Heyd–Scuseria–Ernzerhof screened Coulomb hybrid functional
journal, July 2004
- Heyd, Jochen; Scuseria, Gustavo E.
- The Journal of Chemical Physics, Vol. 121, Issue 3, p. 1187-1192
Direct Observation of Nodes and Twofold Symmetry in FeSe Superconductor
journal, June 2011
- Song, C. -L.; Wang, Y. -L.; Cheng, P.
- Science, Vol. 332, Issue 6036
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
journal, March 2017
- Tan, Chaoliang; Cao, Xiehong; Wu, Xue-Jun
- Chemical Reviews, Vol. 117, Issue 9
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
journal, December 2013
- Zhang, Yi; Chang, Tay-Rong; Zhou, Bo
- Nature Nanotechnology, Vol. 9, Issue 2
Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014
- Xu, Xiaodong; Yao, Wang; Xiao, Di
- Nature Physics, Vol. 10, Issue 5
Van der Waals heterostructures
journal, July 2013
- Geim, A. K.; Grigorieva, I. V.
- Nature, Vol. 499, Issue 7459, p. 419-425
Ising pairing in superconducting NbSe2 atomic layers
journal, November 2015
- Xi, Xiaoxiang; Wang, Zefang; Zhao, Weiwei
- Nature Physics, Vol. 12, Issue 2
Epitaxial growth of ultraflat stanene with topological band inversion
journal, November 2018
- Deng, Jialiang; Xia, Bingyu; Ma, Xiaochuan
- Nature Materials, Vol. 17, Issue 12
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces
journal, October 1997
- Xue, Q.
- Progress in Surface Science, Vol. 56, Issue 1-2
Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface
journal, September 2014
- Zhou, Miao; Ming, Wenmei; Liu, Zheng
- Proceedings of the National Academy of Sciences, Vol. 111, Issue 40
Direct Observation of High-Temperature Superconductivity in One-Unit-Cell FeSe Films
journal, January 2014
- Zhang, Wen-Hao; Sun, Yi; Zhang, Jin-Song
- Chinese Physics Letters, Vol. 31, Issue 1
Universal description of III-V/Si epitaxial growth processes
journal, June 2018
- Lucci, I.; Charbonnier, S.; Pedesseau, L.
- Physical Review Materials, Vol. 2, Issue 6
Realizing an intrinsic excitonic insulator by decoupling exciton binding energy from the minimum band gap
journal, August 2018
- Jiang, Zeyu; Li, Yuanchang; Zhang, Shengbai
- Physical Review B, Vol. 98, Issue 8
Large quantum-spin-Hall gap in single-layer 1T′ WSe2
journal, May 2018
- Chen, P.; Pai, Woei Wu; Chan, Y. -H.
- Nature Communications, Vol. 9, Issue 1
Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit
journal, July 2010
- Li, Yao-Yi; Wang, Guang; Zhu, Xie-Gang
- Advanced Materials, Vol. 22, Issue 36
Large-Gap Quantum Spin Hall Insulators in Tin Films
journal, September 2013
- Xu, Yong; Yan, Binghai; Zhang, Hai-Jun
- Physical Review Letters, Vol. 111, Issue 13
Electronic Band Engineering in Elemental 2D Materials
journal, August 2018
- Meng, Ziyuan; Zhuang, Jincheng; Xu, Xun
- Advanced Materials Interfaces, Vol. 5, Issue 20
Electronics based on two-dimensional materials
journal, October 2014
- Fiori, Gianluca; Bonaccorso, Francesco; Iannaccone, Giuseppe
- Nature Nanotechnology, Vol. 9, Issue 10
Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit
journal, June 2017
- Huang, Bevin; Clark, Genevieve; Navarro-Moratalla, Efrén
- Nature, Vol. 546, Issue 7657
Traditional Semiconductors in the Two-Dimensional Limit
journal, February 2018
- Lucking, Michael C.; Xie, Weiyu; Choe, Duk-Hyun
- Physical Review Letters, Vol. 120, Issue 8
Quantum spin Hall effect in two-dimensional transition metal dichalcogenides
journal, November 2014
- Qian, X.; Liu, J.; Fu, L.
- Science, Vol. 346, Issue 6215
Synthesis of Millimeter-Scale Transition Metal Dichalcogenides Single Crystals
journal, February 2016
- Gong, Yongji; Ye, Gonglan; Lei, Sidong
- Advanced Functional Materials, Vol. 26, Issue 12
Volmer-Weber growth of AlSb on Si(111)
journal, January 2013
- Proessdorf, A.; Hanke, M.; Jenichen, B.
- Applied Physics Letters, Vol. 102, Issue 4
Possible Phason-Polaron Effect on Purely One-Dimensional Charge Order of Nanowires
journal, September 2020
- Yang, Xing; Xian, Jing-Jing; Li, Gang
- Physical Review X, Vol. 10, Issue 3
Monolayer 1T-NbSe2 as a Mott insulator
journal, November 2016
- Nakata, Yuki; Sugawara, Katsuaki; Shimizu, Ryota
- NPG Asia Materials, Vol. 8, Issue 11
Mott phase in a van der Waals transition-metal halide at single-layer limit
journal, June 2020
- Peng, Lang; Zhao, Jianzhou; Cai, Min
- Physical Review Research, Vol. 2, Issue 2
Quasiparticle interference of Fermi arc states in the type-II Weyl semimetal candidate
journal, April 2018
- Yuan, Yuan; Yang, Xing; Peng, Lang
- Physical Review B, Vol. 97, Issue 16
Observation of topological states residing at step edges of WTe2
journal, September 2017
- Peng, Lang; Yuan, Yuan; Li, Gang
- Nature Communications, Vol. 8, Issue 1
Epitaxial growth of two-dimensional stanene
journal, August 2015
- Zhu, Feng-feng; Chen, Wei-jiong; Xu, Yong
- Nature Materials, Vol. 14, Issue 10
Structures and electronic states of the InSb{111}A,B-(2×2) surfaces
journal, August 2002
- Eguchi, Toyoaki; Miura, Taneaki; Cho, Sung-Pyo
- Surface Science, Vol. 514, Issue 1-3
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
journal, April 2010
- Grimme, Stefan; Antony, Jens; Ehrlich, Stephan
- The Journal of Chemical Physics, Vol. 132, Issue 15
Two-dimensional magnetic crystals and emergent heterostructure devices
journal, February 2019
- Gong, Cheng; Zhang, Xiang
- Science, Vol. 363, Issue 6428
Quantum spin Hall state in monolayer 1T'-WTe2
journal, June 2017
- Tang, Shujie; Zhang, Chaofan; Wong, Dillon
- Nature Physics, Vol. 13, Issue 7