Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties
Abstract
Atomic-scale fabrication is an outstanding challenge and overarching goal for the nanoscience community. The practical implementation of moving and fixing atoms to a structure is non-trivial considering that one must spatially address the positioning of single atoms, provide a stabilizing scaffold to hold structures in place, and understand the details of their chemical bonding. Free-standing graphene offers a simplified platform for the development of atomic-scale fabrication and the focused electron beam in a scanning transmission electron microscope can be used to locally induce defects and sculpt the graphene. In this scenario, the graphene forms the stabilizing scaffold and the experimental question is whether a range of dopant atoms can be attached and incorporated into the lattice using a single technique and, from a theoretical perspective, we would like to know which dopants will create technologically interesting properties. Here in this paper, we demonstrate that the electron beam can be used to selectively and precisely insert a variety of transition metal atoms into graphene with highly localized control over the doping locations. We use first-principles density functional theory calculations with direct observation of the created structures to reveal the energetics of incorporating metal atoms into graphene and their magnetic, electronic, andmore »
- Authors:
-
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Univ. of Tennessee, Knoxville, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Univ. of Tennessee, Knoxville, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1770656
- Alternate Identifier(s):
- OSTI ID: 1809387
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Carbon
- Additional Journal Information:
- Journal Volume: 173; Journal ID: ISSN 0008-6223
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Graphene doping; e-beam manipulation; Magnetic moment; Band gap; Band topology
Citation Formats
Dyck, Ondrej, Zhang, Lizhi, Yoon, Mina, Swett, Jacob L., Hensley, Dale K., Zhang, Cheng, Rack, Philip D., Fowlkes, Jason Davidson, Lupini, Andrew R., and Jesse, Stephen. Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties. United States: N. p., 2020.
Web. doi:10.1016/j.carbon.2020.11.015.
Dyck, Ondrej, Zhang, Lizhi, Yoon, Mina, Swett, Jacob L., Hensley, Dale K., Zhang, Cheng, Rack, Philip D., Fowlkes, Jason Davidson, Lupini, Andrew R., & Jesse, Stephen. Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties. United States. https://doi.org/10.1016/j.carbon.2020.11.015
Dyck, Ondrej, Zhang, Lizhi, Yoon, Mina, Swett, Jacob L., Hensley, Dale K., Zhang, Cheng, Rack, Philip D., Fowlkes, Jason Davidson, Lupini, Andrew R., and Jesse, Stephen. Sat .
"Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties". United States. https://doi.org/10.1016/j.carbon.2020.11.015. https://www.osti.gov/servlets/purl/1770656.
@article{osti_1770656,
title = {Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties},
author = {Dyck, Ondrej and Zhang, Lizhi and Yoon, Mina and Swett, Jacob L. and Hensley, Dale K. and Zhang, Cheng and Rack, Philip D. and Fowlkes, Jason Davidson and Lupini, Andrew R. and Jesse, Stephen},
abstractNote = {Atomic-scale fabrication is an outstanding challenge and overarching goal for the nanoscience community. The practical implementation of moving and fixing atoms to a structure is non-trivial considering that one must spatially address the positioning of single atoms, provide a stabilizing scaffold to hold structures in place, and understand the details of their chemical bonding. Free-standing graphene offers a simplified platform for the development of atomic-scale fabrication and the focused electron beam in a scanning transmission electron microscope can be used to locally induce defects and sculpt the graphene. In this scenario, the graphene forms the stabilizing scaffold and the experimental question is whether a range of dopant atoms can be attached and incorporated into the lattice using a single technique and, from a theoretical perspective, we would like to know which dopants will create technologically interesting properties. Here in this paper, we demonstrate that the electron beam can be used to selectively and precisely insert a variety of transition metal atoms into graphene with highly localized control over the doping locations. We use first-principles density functional theory calculations with direct observation of the created structures to reveal the energetics of incorporating metal atoms into graphene and their magnetic, electronic, and quantum topological properties.},
doi = {10.1016/j.carbon.2020.11.015},
journal = {Carbon},
number = ,
volume = 173,
place = {United States},
year = {Sat Nov 07 00:00:00 EST 2020},
month = {Sat Nov 07 00:00:00 EST 2020}
}
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