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Title: Beyond Substrates: Strain Engineering of Ferroelectric Membranes

Abstract

Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO3, production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. Additionally, in devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm-1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via directmore » epitaxial growth.« less

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [2];  [2];  [2];  [2];  [2];  [3];  [4];  [4]
  1. Univ. of California, Berkeley, CA (United States); Catalan Inst. of Nanoscience and Nanotechnology (ICN2), Barcelona (Spain)
  2. Univ. of California, Berkeley, CA (United States)
  3. Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  4. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); AEI; National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1770143
Alternate Identifier(s):
OSTI ID: 1785823
Grant/Contract Number:  
SEV‐2017‐0706; DE‐SC‐0012375; AC02‐76SF00515; DMR‐1708615; FA9550‐18‐1‐0480
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 32; Journal Issue: 43; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; complex oxides on silicon; epitaxial lift-off; ferroelectric domain switching; flexible devices; strain engineering

Citation Formats

Pesquera, David, Parsonnet, Eric, Qualls, Alexander, Xu, Ruijuan, Gubser, Andrew J., Kim, Jieun, Jiang, Yizhe, Velarde, Gabriel, Huang, Yen‐Lin, Hwang, Harold Y., Ramesh, Ramamoorthy, and Martin, Lane W.. Beyond Substrates: Strain Engineering of Ferroelectric Membranes. United States: N. p., 2020. Web. https://doi.org/10.1002/adma.202003780.
Pesquera, David, Parsonnet, Eric, Qualls, Alexander, Xu, Ruijuan, Gubser, Andrew J., Kim, Jieun, Jiang, Yizhe, Velarde, Gabriel, Huang, Yen‐Lin, Hwang, Harold Y., Ramesh, Ramamoorthy, & Martin, Lane W.. Beyond Substrates: Strain Engineering of Ferroelectric Membranes. United States. https://doi.org/10.1002/adma.202003780
Pesquera, David, Parsonnet, Eric, Qualls, Alexander, Xu, Ruijuan, Gubser, Andrew J., Kim, Jieun, Jiang, Yizhe, Velarde, Gabriel, Huang, Yen‐Lin, Hwang, Harold Y., Ramesh, Ramamoorthy, and Martin, Lane W.. Tue . "Beyond Substrates: Strain Engineering of Ferroelectric Membranes". United States. https://doi.org/10.1002/adma.202003780. https://www.osti.gov/servlets/purl/1770143.
@article{osti_1770143,
title = {Beyond Substrates: Strain Engineering of Ferroelectric Membranes},
author = {Pesquera, David and Parsonnet, Eric and Qualls, Alexander and Xu, Ruijuan and Gubser, Andrew J. and Kim, Jieun and Jiang, Yizhe and Velarde, Gabriel and Huang, Yen‐Lin and Hwang, Harold Y. and Ramesh, Ramamoorthy and Martin, Lane W.},
abstractNote = {Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO3, production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. Additionally, in devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm-1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.},
doi = {10.1002/adma.202003780},
journal = {Advanced Materials},
number = 43,
volume = 32,
place = {United States},
year = {2020},
month = {9}
}

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