Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor

Aryal, Sandip; Paudyal, Durga; Pati, Ranjit

doi:10.1021/acs.nanolett.0c04971

Title: Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor

Abstract

An antiferromagnet offers many important functionalities such as opportunities for electrical control of magnetic domains, immunity from magnetic perturbations, and fast spin dynamics. Introducing some of these intriguing features of an antiferromagnet into a low dimensional semiconductor core–shell nanowire offers an exciting pathway for its usage in antiferromagnetic semiconductor spintronics. Here, using a quantum mechanical approach, we predict that the Cr-doped Ge-core/Si-shell nanowire behaves as an antiferromagnetic semiconductor. In this work, the origin of antiferromagnetic spin alignments between Cr is attributed to the superexchange interaction mediated by the p_z orbitals of the Ge atoms that are bonded to Cr. A weak spin–orbit interaction was found in this material, suggesting a longer spin coherence length. The spin-dependent quantum transport calculations in the Cr-doped nanowire junction reveals a switching feature with a high ON/OFF current ratio (~41 times higher for the ON state at a relatively small bias of 0.83 V).

Authors:

Aryal, Sandip ^[1]; Paudyal, Durga ^[2];

^[1]

Michigan Technological Univ., Houghton, MI (United States)
Ames Lab., Ames, IA (United States); Iowa State Univ., Ames, IA (United States)

Publication Date:: Fri Feb 12 00:00:00 EST 2021

Research Org.:: Ames Laboratory (AMES), Ames, IA (United States). Critical Materials Institute

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Advanced Manufacturing Office

OSTI Identifier:: 1769022

Report Number(s):: IS-J-10,427
Journal ID: ISSN 1530-6984

Grant/Contract Number:: AC02-07CH11358

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 21; Journal Issue: 4; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; antiferromagnetism; semiconductor core−shell nanowire; superexchange; electronic structure; spin−orbit coupling; quantum transport

Citation Formats


                    Aryal, Sandip, Paudyal, Durga, and Pati, Ranjit. Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor.  United States: N. p., 2021. 
Web.  doi:10.1021/acs.nanolett.0c04971.

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                    Aryal, Sandip, Paudyal, Durga, & Pati, Ranjit. Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor.  United States.  https://doi.org/10.1021/acs.nanolett.0c04971

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                    Aryal, Sandip, Paudyal, Durga, and Pati, Ranjit. Fri .  
"Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor".  United States.  https://doi.org/10.1021/acs.nanolett.0c04971.  https://www.osti.gov/servlets/purl/1769022.

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@article{osti_1769022,

  title        = {Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor},

  author       = {Aryal, Sandip and Paudyal, Durga and Pati, Ranjit},

  abstractNote = {An antiferromagnet offers many important functionalities such as opportunities for electrical control of magnetic domains, immunity from magnetic perturbations, and fast spin dynamics. Introducing some of these intriguing features of an antiferromagnet into a low dimensional semiconductor core–shell nanowire offers an exciting pathway for its usage in antiferromagnetic semiconductor spintronics. Here, using a quantum mechanical approach, we predict that the Cr-doped Ge-core/Si-shell nanowire behaves as an antiferromagnetic semiconductor. In this work, the origin of antiferromagnetic spin alignments between Cr is attributed to the superexchange interaction mediated by the pz orbitals of the Ge atoms that are bonded to Cr. A weak spin–orbit interaction was found in this material, suggesting a longer spin coherence length. The spin-dependent quantum transport calculations in the Cr-doped nanowire junction reveals a switching feature with a high ON/OFF current ratio (~41 times higher for the ON state at a relatively small bias of 0.83 V).},

  doi          = {10.1021/acs.nanolett.0c04971},

  journal      = {Nano Letters},

  number       = 4,

  volume       = 21,

  place        = {United States},

  year         = {Fri Feb 12 00:00:00 EST 2021},

  month        = {Fri Feb 12 00:00:00 EST 2021}

}

Copy to clipboard

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Title: Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor

Abstract

Citation Formats

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Programmable nanowire circuits for nanoprocessors
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journal, May 2006

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journal, October 1996

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Density‐functional thermochemistry. III. The role of exact exchange
journal, April 1993

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journal, November 2019

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What Determines the Sign Reversal of Magnetoresistance in a Molecular Tunnel Junction?
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journal, July 1996

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journal, September 2004

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journal, June 2016

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journal, October 1996

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journal, December 2006

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journal, July 1950

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