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Title: Removal of surface states on Si(1 0 0) by valence-mending passivation

Journal Article · · Applied Surface Science

Not Available

Sponsoring Organization:
USDOE
OSTI ID:
1765913
Journal Information:
Applied Surface Science, Journal Name: Applied Surface Science Journal Issue: C Vol. 462; ISSN 0169-4332
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English

References (29)

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Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation journal March 2014
Adsorption and desorption of Se on Si(100)2×1: surface restoration journal November 2000
Structure of sulphur-terminated silicon surfaces journal April 1997
Compositional and electronic properties of Si(001)2×1 upon diatomic sulfur interaction journal August 1999
Monolayer passivation of silicon(001) surface by selenium journal March 2007
A high Schottky barrier between Ni and S-passivated n-type Si(100) surface journal November 2008
Hydrolyzation oxidation of Al x Ga 1− x As‐AlAs‐GaAs quantum well heterostructures and superlattices journal December 1990
John Bardeen and transistor physics
  • Huff, Howard R.
  • The 2000 international conference on characterization and metrology for ULSI technology, AIP Conference Proceedings https://doi.org/10.1063/1.1354371
conference January 2001
Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium journal March 2003
Low Schottky barriers on n-type silicon (001) journal September 2003
Thermal stability of ohmic contacts between Ti and Se-passivated n -type Si(001) journal April 2004
Surface States and Barrier Height of Metal‐Semiconductor Systems journal October 1965
Stability of Se passivation layers on Si(001) surfaces characterized by time-of-flight positron annihilation induced Auger electron spectroscopy journal May 2005
Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole journal May 2007
The work function of the elements and its periodicity journal November 1977
Extracting accurate capacitance voltage curves from impedance spectroscopy journal January 2012
Nearly ideal electronic properties of sulfide coated GaAs surfaces journal August 1987
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation journal July 1987
Transmission electron microscopy of the formation of nickel silicides journal January 1982
Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation journal January 2007
Semiconductor-surface restoration by valence-mending adsorbates: Application to Si(100):S and Si(100):Se journal March 1991
Adsorption of elemental S on Si(100)2×1: Surface restoration journal February 1997
Atomically Thin MoS2 A New Direct-Gap Semiconductor journal September 2010
Structure of the H-saturated Si(100) surface journal December 1990
A High Schottky-Barrier of 1.1 eV Between Al and S-Passivated p-Type Si(100) Surface journal January 2007
Passivation of a Si(100) Surface by S from Solution journal January 2007
Grain Boundary Passivation in Multicrystalline Silicon Using Hydrogen Sulfide journal January 2015
Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application journal October 2015

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