Impacts of noise and structure on quantum information encoded in a quantum memory

Journal Article · 15 July 2021 · Phys.Rev.A

DOI: https://doi.org/10.1103/PhysRevA.104.012605 · OSTI ID:1764149

Otten, Matthew ^[1]; Kapoor, Keshav ^[2]; Özgüler, A. Barış  ^[2]; Holland, Eric T. ^[2]; Kowalkowski, James B.  ^[2]; Alexeev, Yuri ^[1]; Lyon, Adam L.  ^[2]

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1. Argonne
2. Fermilab

As larger, higher-quality quantum devices are built and demonstrated in quantum information applications, such as quantum computation and quantum communication, the need for high-quality quantum memories to store quantum states becomes ever more pressing. Future quantum devices likely will use a variety of physical hardware, some being used primarily for processing of quantum information and others for storage. Here we study the correlation of the structure of quantum information with physical noise models of various possible quantum memory implementations. Through numerical simulation of different noise models and approximate analytical formulas applied to a variety of interesting quantum states, we provide comparisons between quantum hardware with different structure, including both qubit- and qudit-based quantum memories. Our findings point to simple, experimentally relevant formulas for the relative lifetimes of quantum information in different quantum memories and have relevance to the design of hybrid quantum devices.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States); Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
• Sponsoring Organization: US Department of Energy
• Grant/Contract Number: AC02-07CH11359
• OSTI ID: 1764149
• Report Number(s): FERMILAB-PUB-20-615-QIS-SCD; oai:inspirehep.net:1835903; arXiv:2011.13143
• Journal Information: Phys.Rev.A, Journal Name: Phys.Rev.A Journal Issue: 1 Vol. 104
• Country of Publication: United States
• Language: English