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Title: Enhancing the local conductivity of Cu films using temperature-assisted agglomerated Cu nanostructures

Journal Article · · Journal of Physics. D, Applied Physics
 [1];  [1];  [1];  [1];  [2];  [2]; ORCiD logo [3]; ORCiD logo [3]; ORCiD logo [4]; ORCiD logo [1]
  1. Pusan National Univ., Busan (Korea, Republic of)
  2. Jeonbuk National Univ., Jeonju (Korea, Republic of)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Inst. for Basic Science, Pohang (Korea, Republic of); Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of)

We investigate the structural and electrical properties of Cu film and reveal their changes as a function of post-annealing temperature. Thermal annealing of a Cu film on a dielectric substrate can improve its crystallinity; however, high-temperature annealing also leads to a morphological transformation that hinders the precise measurement of electrical properties. The enhanced crystallinity of the Cu films is verified with x-ray diffraction as the annealing temperature increases. To examine the electrical properties of the Cu film after the dewetting processes, which promotes the formation of voids and agglomerations, we utilize both conventional micro four-point probe method as well as an advanced four-point probe scanning tunneling microscopy (4P-STM) technique to measure the conductance and evolution of the microscopic structural properties. We could eliminate a deceptive effect of voids with 4P-STM technique, and disclosed a significantly reduced resistivity (1.88 ± 0.07 µΩ∙cm) of Cu nanostructure after post-annealing at 700 °C. We unveiled impact of crystallinity and imperfections of Cu nanostructure, and discussed the critical role of the twin grain boundaries of single-crystalline Cu (1 1 1) on an Al2O3 substrate. We anticipate that understanding the evolution of the structures and the enhanced electrical properties of the post-annealed Cu nanostructures would be important for nanoscale devices where Cu is used as an interconnecting material and could provide a new route to control the plasmonic applications.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Sponsoring Organization:
Korea Inst. for Basic Science (IBS); National Research Foundation of Korea (NRF); USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1761721
Journal Information:
Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Journal Issue: 9 Vol. 53; ISSN 0022-3727
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

References (30)

Electron Transport at the Nanometer-Scale Spatially Revealed by Four-Probe Scanning Tunneling Microscopy journal March 2013
Measurement of Sheet Resistivities with the Four-Point Probe journal May 1958
The Thermodynamics and Kinetics of film agglomeration journal March 1995
Orientation relationships of copper crystals on c-plane sapphire journal August 2011
Dewetted nanostructures of gold, silver, copper, and palladium with enhanced faceting journal February 2019
Copper Better than Silver: Electrical Resistivity of the Grain-Free Single-Crystal Copper Wire journal June 2010
Efficient Directional Coupling between Silicon and Copper Plasmonic Nanoslot Waveguides: toward Metal−Oxide−Silicon Nanophotonics journal August 2010
Large Discrete Resistance Jump at Grain Boundary in Copper Nanowire journal August 2010
Stabilizing nanostructures in metals using grain and twin boundary architectures journal March 2016
Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering journal August 2014
Repeated Solid-state Dewetting of Thin Gold Films for Nanogap-rich Plasmonic Nanoislands journal October 2015
Sub-micron resolution surface plasmon resonance imaging enabled by nanohole arrays with surrounding Bragg mirrors for enhanced sensitivity and isolation journal January 2009
Sub-30 nm thick plasmonic films and structures with ultralow loss journal January 2014
Thickness dependence on the thermal stability of silver thin films journal November 2002
Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions journal April 2004
Control of bonding and epitaxy at copper/sapphire interface journal October 2007
A cryogenic Quadraprobe scanning tunneling microscope system with fabrication capability for nanotransport research journal December 2007
Epitaxial grain growth in thin metal films journal May 1990
Stability of the grain configurations of thin films—A model for agglomeration journal August 1997
Dewetting of Au and AuPt alloy films: A dewetting zone model journal March 2013
Modification in electrical transport with a change in geometry from a nanowire to a nanotube of copper: effect of the extra surface journal April 2012
Size-dependent resistivity of metallic wires in the mesoscopic range journal August 2002
Kinetics of voiding and agglomeration of copper nanolayers on silica journal September 2005
Surface and grain-boundary scattering in nanometric Cu films journal April 2010
Heteroepitaxial growth of MgO(111) thin films on Al 2 O 3 (0001): Evidence of a wurtzite to rocksalt transformation journal July 2012
Grains, Growth, and Grooving journal July 2003
X-Ray Wavelengths journal January 1967
Ultrahigh Strength and High Electrical Conductivity in Copper journal April 2004
Advanced Interconnects: Materials, Processing, and Reliability journal October 2014
Loss mechanisms of surface plasmon polaritons propagating on a smooth polycrystalline Cu surface journal January 2012

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