Epitaxial stabilization of ultra thin films of high entropy perovskite
Abstract
High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La0.2Pr0.2Nd0.2Sm0.2Eu0.2)NiO3] thin films on NdGaO3 substrates by pulsed laser deposition. The combined characterizations with in situ reflection high energy electron diffraction, atomic force microscopy, and x-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive x-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO3. Furthermore, since both these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of A-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.
- Authors:
-
[1];
[1];
[1];
[1];
[2];
[1]
- Indian Inst. of Science, Bengaluru (India)
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Office of Basic Energy Sciences (BES). Scientific User Facilities Division; Government of India, Department of Science and Technology; USDOE
- OSTI Identifier:
- 1761513
- Alternate Identifier(s):
- OSTI ID: 1600046
- Grant/Contract Number:
- AC02-06CH11357; DST/NM/NS/2018/246; SR/NM/Z-07/2015
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 7; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Atomic force microscopy; electron diffraction; epitaxy; thin films; x-ray absorption spectroscopy; phase transitions; perovskites; x-ray diffraction; entropy; pulsed laser deposition
Citation Formats
Patel, Ranjan Kumar, Ojha, Shashank Kumar, Kumar, Siddharth, Saha, Akash, Mandal, Prithwijit, Freeland, J. W., and Middey, S. Epitaxial stabilization of ultra thin films of high entropy perovskite. United States: N. p., 2020.
Web. doi:10.1063/1.5133710.
Patel, Ranjan Kumar, Ojha, Shashank Kumar, Kumar, Siddharth, Saha, Akash, Mandal, Prithwijit, Freeland, J. W., & Middey, S. Epitaxial stabilization of ultra thin films of high entropy perovskite. United States. https://doi.org/10.1063/1.5133710
Patel, Ranjan Kumar, Ojha, Shashank Kumar, Kumar, Siddharth, Saha, Akash, Mandal, Prithwijit, Freeland, J. W., and Middey, S. Tue .
"Epitaxial stabilization of ultra thin films of high entropy perovskite". United States. https://doi.org/10.1063/1.5133710. https://www.osti.gov/servlets/purl/1761513.
@article{osti_1761513,
title = {Epitaxial stabilization of ultra thin films of high entropy perovskite},
author = {Patel, Ranjan Kumar and Ojha, Shashank Kumar and Kumar, Siddharth and Saha, Akash and Mandal, Prithwijit and Freeland, J. W. and Middey, S.},
abstractNote = {High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La0.2Pr0.2Nd0.2Sm0.2Eu0.2)NiO3] thin films on NdGaO3 substrates by pulsed laser deposition. The combined characterizations with in situ reflection high energy electron diffraction, atomic force microscopy, and x-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive x-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO3. Furthermore, since both these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of A-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.},
doi = {10.1063/1.5133710},
journal = {Applied Physics Letters},
number = 7,
volume = 116,
place = {United States},
year = {Tue Feb 18 00:00:00 EST 2020},
month = {Tue Feb 18 00:00:00 EST 2020}
}
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