Mg x Zn 1−x O contact to CuGa 3 Se 5 absorber for photovoltaic and photoelectrochemical devices
Abstract
Abstract CuGa 3 Se 5 is a promising candidate material with wide band gap for top cells in tandem photovoltaic and photoelectrochemical (PEC) devices. However, traditional CdS contact layers used with other chalcopyrite absorbers are not suitable for CuGa 3 Se 5 due to the higher position of its conduction band (CB) minimum. Mg x Zn 1− x O (MZO) is a transparent oxide with adjustable band gap and CB position as a function of magnesium composition, but its direct application is hindered by CuGa 3 Se 5 surface oxidation. Here, MZO is investigated as a contact (n-type ‘buffer’ or ‘window’) material to CuGa 3 Se 5 absorbers pretreated in Cd 2+ solution, and an onset potential close to 1 V vs reversible hydrogen electrode in 10 mM hexaammineruthenium (III) chloride electrolyte is demonstrated. The Cd 2+ surface treatment changes the chemical composition and electronic structure of the CuGa 3 Se 5 surface, as demonstrated by photoelectron spectroscopy measurements. The performance of CuGa 3 Se 5 absorber with Cd 2+ treated surface in the solid-state test structure depends on the Zn/Mg ratio in the MZO layer. The measured open circuit voltage of 925 mV is promising for tandem PEC watermore »
- Authors:
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1835477
- Alternate Identifier(s):
- OSTI ID: 1760661
- Report Number(s):
- NREL/JA-5K00-78437
Journal ID: ISSN 2515-7655
- Grant/Contract Number:
- EE0006670; AC36-08GO28308
- Resource Type:
- Published Article
- Journal Name:
- JPhys Energy
- Additional Journal Information:
- Journal Name: JPhys Energy Journal Volume: 3 Journal Issue: 2; Journal ID: ISSN 2515-7655
- Publisher:
- IOP Publishing
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; photovoltaic; photoelectrochemical; oxide; selenide
Citation Formats
Khan, Imran S., Muzzillo, Christopher P., Perkins, Craig L., Norman, Andrew G., Young, James L., Gaillard, Nicolas, and Zakutayev, Andriy. Mg x Zn 1−x O contact to CuGa 3 Se 5 absorber for photovoltaic and photoelectrochemical devices. United Kingdom: N. p., 2021.
Web. doi:10.1088/2515-7655/abd3b3.
Khan, Imran S., Muzzillo, Christopher P., Perkins, Craig L., Norman, Andrew G., Young, James L., Gaillard, Nicolas, & Zakutayev, Andriy. Mg x Zn 1−x O contact to CuGa 3 Se 5 absorber for photovoltaic and photoelectrochemical devices. United Kingdom. https://doi.org/10.1088/2515-7655/abd3b3
Khan, Imran S., Muzzillo, Christopher P., Perkins, Craig L., Norman, Andrew G., Young, James L., Gaillard, Nicolas, and Zakutayev, Andriy. Thu .
"Mg x Zn 1−x O contact to CuGa 3 Se 5 absorber for photovoltaic and photoelectrochemical devices". United Kingdom. https://doi.org/10.1088/2515-7655/abd3b3.
@article{osti_1835477,
title = {Mg x Zn 1−x O contact to CuGa 3 Se 5 absorber for photovoltaic and photoelectrochemical devices},
author = {Khan, Imran S. and Muzzillo, Christopher P. and Perkins, Craig L. and Norman, Andrew G. and Young, James L. and Gaillard, Nicolas and Zakutayev, Andriy},
abstractNote = {Abstract CuGa 3 Se 5 is a promising candidate material with wide band gap for top cells in tandem photovoltaic and photoelectrochemical (PEC) devices. However, traditional CdS contact layers used with other chalcopyrite absorbers are not suitable for CuGa 3 Se 5 due to the higher position of its conduction band (CB) minimum. Mg x Zn 1− x O (MZO) is a transparent oxide with adjustable band gap and CB position as a function of magnesium composition, but its direct application is hindered by CuGa 3 Se 5 surface oxidation. Here, MZO is investigated as a contact (n-type ‘buffer’ or ‘window’) material to CuGa 3 Se 5 absorbers pretreated in Cd 2+ solution, and an onset potential close to 1 V vs reversible hydrogen electrode in 10 mM hexaammineruthenium (III) chloride electrolyte is demonstrated. The Cd 2+ surface treatment changes the chemical composition and electronic structure of the CuGa 3 Se 5 surface, as demonstrated by photoelectron spectroscopy measurements. The performance of CuGa 3 Se 5 absorber with Cd 2+ treated surface in the solid-state test structure depends on the Zn/Mg ratio in the MZO layer. The measured open circuit voltage of 925 mV is promising for tandem PEC water splitting with CuGa 3 Se 5 /MZO top cells.},
doi = {10.1088/2515-7655/abd3b3},
journal = {JPhys Energy},
number = 2,
volume = 3,
place = {United Kingdom},
year = {Thu Jan 28 00:00:00 EST 2021},
month = {Thu Jan 28 00:00:00 EST 2021}
}
https://doi.org/10.1088/2515-7655/abd3b3
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