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Title: Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser

Abstract

Femtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d 5/2 core level (M5-edge, 572-577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1-2 ps timescale, which is interpreted as electron-hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [4]; ORCiD logo [5];  [6]; ORCiD logo [7]; ORCiD logo [7];  [7];  [8]; ORCiD logo [8]; ORCiD logo [9]; ORCiD logo [10];  [11]; ORCiD logo [6];  [3];  [6];  [12]; ORCiD logo [12]; ORCiD logo [13]
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); SLAC National Accelerator Lab., Menlo Park, CA (United States). Linac Coherent Light Source (LCLS)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); SLAC National Accelerator Lab., Menlo Park, CA (United States). Linac Coherent Light Source (LCLS); Stanford Univ., CA (United States). SUNCAT Center for Interface Science and Catalysis
  3. Rice Univ., Houston, TX (United States)
  4. Univ. of California, Berkeley, CA (United States)
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  6. Univ. of Southern California, Los Angeles, CA (United States). Collaboratory for Advanced Computing and Simulations
  7. Pohang Accelerator Lab. (PAL-XFEL) (Korea, Republic of)
  8. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
  9. SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); Stanford Univ., CA (United States). SUNCAT Center for Interface Science and Catalysis; Stanford Univ., CA (United States)
  10. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  11. SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States)
  12. SLAC National Accelerator Lab., Menlo Park, CA (United States). Linac Coherent Light Source (LCLS)
  13. SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences & Biosciences Division; W. M. Keck Foundation; US Air Force Office of Scientific Research (AFOSR); US Army Research Office (ARO); Ministry of Education of Korea; USDOE
OSTI Identifier:
1817879
Alternate Identifier(s):
OSTI ID: 1755665; OSTI ID: 1759111
Grant/Contract Number:  
AC02-05CH11231; SC0014607; 2020R1A2C1007416; 2018R1D1A1B07046676; S10OD023532; 046300; A9550-19-1-0314; FA9550-14-1-0154; FA9550-15-1-0037; W911NF-14-1-0383; AC02-76SF00515; FWP 100435; DEAC02-05-CH11231; KC3103
Resource Type:
Accepted Manuscript
Journal Name:
Structural Dynamics
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2329-7778
Publisher:
American Crystallographic Association/AIP
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; x-ray absorption spectroscopy; semiconductor materials; 2D materials; transition metal chalcogenides; free electron lasers; transient-absorption spectroscopy; charge recombination; femtosecond carrier dynamics; density functional theory

Citation Formats

Britz, Alexander, Attar, Andrew R., Zhang, Xiang, Chang, Hung-Tzu, Nyby, Clara, Krishnamoorthy, Aravind, Park, Sang Han, Kwon, Soonnam, Kim, Minseok, Nordlund, Dennis, Sainio, Sami, Heinz, Tony F., Leone, Stephen R., Lindenberg, Aaron M., Nakano, Aiichiro, Ajayan, Pulickel, Vashishta, Priya, Fritz, David, Lin, Ming-Fu, and Bergmann, Uwe. Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser. United States: N. p., 2021. Web. doi:10.1063/4.0000048.
Britz, Alexander, Attar, Andrew R., Zhang, Xiang, Chang, Hung-Tzu, Nyby, Clara, Krishnamoorthy, Aravind, Park, Sang Han, Kwon, Soonnam, Kim, Minseok, Nordlund, Dennis, Sainio, Sami, Heinz, Tony F., Leone, Stephen R., Lindenberg, Aaron M., Nakano, Aiichiro, Ajayan, Pulickel, Vashishta, Priya, Fritz, David, Lin, Ming-Fu, & Bergmann, Uwe. Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser. United States. https://doi.org/10.1063/4.0000048
Britz, Alexander, Attar, Andrew R., Zhang, Xiang, Chang, Hung-Tzu, Nyby, Clara, Krishnamoorthy, Aravind, Park, Sang Han, Kwon, Soonnam, Kim, Minseok, Nordlund, Dennis, Sainio, Sami, Heinz, Tony F., Leone, Stephen R., Lindenberg, Aaron M., Nakano, Aiichiro, Ajayan, Pulickel, Vashishta, Priya, Fritz, David, Lin, Ming-Fu, and Bergmann, Uwe. Wed . "Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser". United States. https://doi.org/10.1063/4.0000048. https://www.osti.gov/servlets/purl/1817879.
@article{osti_1817879,
title = {Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser},
author = {Britz, Alexander and Attar, Andrew R. and Zhang, Xiang and Chang, Hung-Tzu and Nyby, Clara and Krishnamoorthy, Aravind and Park, Sang Han and Kwon, Soonnam and Kim, Minseok and Nordlund, Dennis and Sainio, Sami and Heinz, Tony F. and Leone, Stephen R. and Lindenberg, Aaron M. and Nakano, Aiichiro and Ajayan, Pulickel and Vashishta, Priya and Fritz, David and Lin, Ming-Fu and Bergmann, Uwe},
abstractNote = {Femtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d 5/2 core level (M5-edge, 572-577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1-2 ps timescale, which is interpreted as electron-hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.},
doi = {10.1063/4.0000048},
journal = {Structural Dynamics},
number = 1,
volume = 8,
place = {United States},
year = {Wed Jan 13 00:00:00 EST 2021},
month = {Wed Jan 13 00:00:00 EST 2021}
}

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