Semiconductor to Topological Insulator Transition Induced by Stress Propagation in Metal Dichalcogenides Core-Shell Lateral Heterostructures

Dong, Xi; Lai, Wei; Zhang, Pengpeng

doi:10.1039/d0mh01688h

Title: Semiconductor to Topological Insulator Transition Induced by Stress Propagation in Metal Dichalcogenides Core-Shell Lateral Heterostructures

Abstract

Polymorphic phase transition is an important route for engineering the properties of two-dimensional materials. Heterostructure construction, on the other hand, not only allows the integration of different functionalities for device applications, but also enables the exploration of new physics arising from proximity coupling. Yet, implementing a design that incorporates the advantages of both remains underexplored. Here in this paper, based on comprehensive experimental and theoretical studies of WSe₂/SnSe₂ core-shell lateral heterostructure, we demonstrate an unexpected H to T' phase transition in transition metal dichalcogenides (TMDs), correlating to a change of materials properties from semiconductor to topological insulator (TI), and propose a novel shell-to-core stress propagation mechanism. This finding offers new insights into TMD phase transition empowered by the rational design of heterostructures. Owing to the superconducting properties of SnSe₂ at low temperatures, the unique TI/superconductor core-shell template is expected to add more arsenals to the ongoing search of Majorana fermions in condensed matter systems.

Authors:

Dong, Xi ^[1]; Lai, Wei ^[1]; Zhang, Pengpeng ^[1]

Michigan State Univ., East Lansing, MI (United States)

Publication Date:: Wed Dec 16 00:00:00 EST 2020

Research Org.:: Michigan State Univ., East Lansing, MI (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1741038

Alternate Identifier(s):: OSTI ID: 1759096

Grant/Contract Number:: SC0019120

Resource Type:: Accepted Manuscript

Journal Name:: Materials Horizons

Additional Journal Information:: Journal Volume: 8; Journal Issue: 3; Journal ID: ISSN 2051-6347

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; TMD; lateral heterostructure; core-shell; phase engineering; topological insulator

Citation Formats


                    Dong, Xi, Lai, Wei, and Zhang, Pengpeng. Semiconductor to Topological Insulator Transition Induced by Stress Propagation in Metal Dichalcogenides Core-Shell Lateral Heterostructures.  United States: N. p., 2020. 
Web.  doi:10.1039/d0mh01688h.

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                    Dong, Xi, Lai, Wei, & Zhang, Pengpeng. Semiconductor to Topological Insulator Transition Induced by Stress Propagation in Metal Dichalcogenides Core-Shell Lateral Heterostructures.  United States.  https://doi.org/10.1039/d0mh01688h

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                    Dong, Xi, Lai, Wei, and Zhang, Pengpeng. Wed .  
"Semiconductor to Topological Insulator Transition Induced by Stress Propagation in Metal Dichalcogenides Core-Shell Lateral Heterostructures".  United States.  https://doi.org/10.1039/d0mh01688h.  https://www.osti.gov/servlets/purl/1741038.

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@article{osti_1741038,

  title        = {Semiconductor to Topological Insulator Transition Induced by Stress Propagation in Metal Dichalcogenides Core-Shell Lateral Heterostructures},

  author       = {Dong, Xi and Lai, Wei and Zhang, Pengpeng},

  abstractNote = {Polymorphic phase transition is an important route for engineering the properties of two-dimensional materials. Heterostructure construction, on the other hand, not only allows the integration of different functionalities for device applications, but also enables the exploration of new physics arising from proximity coupling. Yet, implementing a design that incorporates the advantages of both remains underexplored. Here in this paper, based on comprehensive experimental and theoretical studies of WSe2/SnSe2 core-shell lateral heterostructure, we demonstrate an unexpected H to T' phase transition in transition metal dichalcogenides (TMDs), correlating to a change of materials properties from semiconductor to topological insulator (TI), and propose a novel shell-to-core stress propagation mechanism. This finding offers new insights into TMD phase transition empowered by the rational design of heterostructures. Owing to the superconducting properties of SnSe2 at low temperatures, the unique TI/superconductor core-shell template is expected to add more arsenals to the ongoing search of Majorana fermions in condensed matter systems.},

  doi          = {10.1039/d0mh01688h},

  journal      = {Materials Horizons},

  number       = 3,

  volume       = 8,

  place        = {United States},

  year         = {Wed Dec 16 00:00:00 EST 2020},

  month        = {Wed Dec 16 00:00:00 EST 2020}

}

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Title: Semiconductor to Topological Insulator Transition Induced by Stress Propagation in Metal Dichalcogenides Core-Shell Lateral Heterostructures

Abstract

Citation Formats

Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control journal, January 2018

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