Demonstration of a Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point
Abstract
Intermediate band solar cells (IBSCs) promise high efficiencies while maintaining a low device structural complexity. A high efficiency can be obtained by harvesting below-band-gap photons, thus increasing the current, while at the same time preserving a high voltage. Here, we provide experimental proof that below-band-gap photons can be used to produce nonzero electrical work in an IBSC without compromising the voltage. For this, we manufacture a GaSb / GaAs quantum-dot IBSC. We use light biasing and make our cell operate at the maximum power point at 9 K. We measure the photocurrent response to absorption of photons with an energy of less than 1.15 eV while the cell is operating at 1.15 V. We also show that this result implies the existence of three quasi-Fermi levels linked to the three electronic bands in our device, as demanded by the IBSC theory to preserve the output voltage of the cell.
- Authors:
- Publication Date:
- Research Org.:
- Univ. of Michigan, Ann Arbor, MI (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1734941
- Alternate Identifier(s):
- OSTI ID: 1850623
- Grant/Contract Number:
- SC0000957
- Resource Type:
- Published Article
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Name: Physical Review Letters Journal Volume: 125 Journal Issue: 24; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Physics; Optoelectronics; Optical and microwave phenomena; Photovoltaic effect; Photoconductivity; Photovoltaic absorbers; Functional materials; Energy materials; Quantum dots; 0-dimensional systems
Citation Formats
Ramiro, I., Villa, J., Hwang, J., Martin, A. J., Millunchick, J., Phillips, J., and Martí, A.. Demonstration of a G aS b / Ga A s Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point. United States: N. p., 2020.
Web. doi:10.1103/PhysRevLett.125.247703.
Ramiro, I., Villa, J., Hwang, J., Martin, A. J., Millunchick, J., Phillips, J., & Martí, A.. Demonstration of a G aS b / Ga A s Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point. United States. https://doi.org/10.1103/PhysRevLett.125.247703
Ramiro, I., Villa, J., Hwang, J., Martin, A. J., Millunchick, J., Phillips, J., and Martí, A.. Wed .
"Demonstration of a G aS b / Ga A s Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point". United States. https://doi.org/10.1103/PhysRevLett.125.247703.
@article{osti_1734941,
title = {Demonstration of a G aS b / Ga A s Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point},
author = {Ramiro, I. and Villa, J. and Hwang, J. and Martin, A. J. and Millunchick, J. and Phillips, J. and Martí, A.},
abstractNote = {Intermediate band solar cells (IBSCs) promise high efficiencies while maintaining a low device structural complexity. A high efficiency can be obtained by harvesting below-band-gap photons, thus increasing the current, while at the same time preserving a high voltage. Here, we provide experimental proof that below-band-gap photons can be used to produce nonzero electrical work in an IBSC without compromising the voltage. For this, we manufacture a GaSb / GaAs quantum-dot IBSC. We use light biasing and make our cell operate at the maximum power point at 9 K. We measure the photocurrent response to absorption of photons with an energy of less than 1.15 eV while the cell is operating at 1.15 V. We also show that this result implies the existence of three quasi-Fermi levels linked to the three electronic bands in our device, as demanded by the IBSC theory to preserve the output voltage of the cell.},
doi = {10.1103/PhysRevLett.125.247703},
journal = {Physical Review Letters},
number = 24,
volume = 125,
place = {United States},
year = {2020},
month = {12}
}
https://doi.org/10.1103/PhysRevLett.125.247703
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