DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Demonstration of a G aS b / Ga A s Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point

Abstract

Intermediate band solar cells (IBSCs) promise high efficiencies while maintaining a low device structural complexity. A high efficiency can be obtained by harvesting below-band-gap photons, thus increasing the current, while at the same time preserving a high voltage. Here, we provide experimental proof that below-band-gap photons can be used to produce nonzero electrical work in an IBSC without compromising the voltage. For this, we manufacture a GaSb / GaAs quantum-dot IBSC. We use light biasing and make our cell operate at the maximum power point at 9 K. We measure the photocurrent response to absorption of photons with an energy of less than 1.15 eV while the cell is operating at 1.15 V. We also show that this result implies the existence of three quasi-Fermi levels linked to the three electronic bands in our device, as demanded by the IBSC theory to preserve the output voltage of the cell.

Authors:
ORCiD logo; ORCiD logo; ORCiD logo; ; ; ORCiD logo; ORCiD logo
Publication Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1734941
Alternate Identifier(s):
OSTI ID: 1850623
Grant/Contract Number:  
SC0000957
Resource Type:
Published Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 125 Journal Issue: 24; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Physics; Optoelectronics; Optical and microwave phenomena; Photovoltaic effect; Photoconductivity; Photovoltaic absorbers; Functional materials; Energy materials; Quantum dots; 0-dimensional systems

Citation Formats

Ramiro, I., Villa, J., Hwang, J., Martin, A. J., Millunchick, J., Phillips, J., and Martí, A.. Demonstration of a G aS b / Ga A s Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point. United States: N. p., 2020. Web. doi:10.1103/PhysRevLett.125.247703.
Ramiro, I., Villa, J., Hwang, J., Martin, A. J., Millunchick, J., Phillips, J., & Martí, A.. Demonstration of a G aS b / Ga A s Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point. United States. https://doi.org/10.1103/PhysRevLett.125.247703
Ramiro, I., Villa, J., Hwang, J., Martin, A. J., Millunchick, J., Phillips, J., and Martí, A.. Wed . "Demonstration of a G aS b / Ga A s Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point". United States. https://doi.org/10.1103/PhysRevLett.125.247703.
@article{osti_1734941,
title = {Demonstration of a G aS b / Ga A s Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point},
author = {Ramiro, I. and Villa, J. and Hwang, J. and Martin, A. J. and Millunchick, J. and Phillips, J. and Martí, A.},
abstractNote = {Intermediate band solar cells (IBSCs) promise high efficiencies while maintaining a low device structural complexity. A high efficiency can be obtained by harvesting below-band-gap photons, thus increasing the current, while at the same time preserving a high voltage. Here, we provide experimental proof that below-band-gap photons can be used to produce nonzero electrical work in an IBSC without compromising the voltage. For this, we manufacture a GaSb / GaAs quantum-dot IBSC. We use light biasing and make our cell operate at the maximum power point at 9 K. We measure the photocurrent response to absorption of photons with an energy of less than 1.15 eV while the cell is operating at 1.15 V. We also show that this result implies the existence of three quasi-Fermi levels linked to the three electronic bands in our device, as demanded by the IBSC theory to preserve the output voltage of the cell.},
doi = {10.1103/PhysRevLett.125.247703},
journal = {Physical Review Letters},
number = 24,
volume = 125,
place = {United States},
year = {2020},
month = {12}
}

Works referenced in this record:

Intermediate band solar cells: Present and future
journal, October 2020

  • Ramiro, Iñigo; Martí, Antonio
  • Progress in Photovoltaics: Research and Applications
  • DOI: 10.1002/pip.3351

Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells
journal, September 2015


Modified simple expression for bandgap narrowing in n-type GaAs
journal, May 1992


Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
journal, June 1997


On the reported experimental evidence for the quasi-Fermi level split in quantum-dot intermediate-band solar cells: Quasi-Fermi level split in quantum-dot IBSCs
journal, October 2011

  • Abouelsaood, Ahmed A.; Ghannam, Moustafa Y.; Poortmans, Jef
  • Progress in Photovoltaics: Research and Applications, Vol. 21, Issue 2
  • DOI: 10.1002/pip.1192

Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage
journal, July 2012

  • Bailey, Christopher G.; Forbes, David V.; Polly, Stephen J.
  • IEEE Journal of Photovoltaics, Vol. 2, Issue 3
  • DOI: 10.1109/JPHOTOV.2012.2189047

Elements of the design and analysis of quantum-dot intermediate band solar cells
journal, August 2008


Three-Bandgap Absolute Quantum Efficiency in GaSb/GaAs Quantum Dot Intermediate Band Solar Cells
journal, March 2017


Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics
journal, September 2017


Band‐gap narrowing in highly doped n ‐ and p ‐type GaAs studied by photoluminescence spectroscopy
journal, November 1989

  • Borghs, G.; Bhattacharyya, K.; Deneffe, K.
  • Journal of Applied Physics, Vol. 66, Issue 9
  • DOI: 10.1063/1.343958

Ultra-high stacks of InGaAs/GaAs quantum dots for high efficiency solar cells
journal, January 2012

  • Sugaya, Takeyoshi; Numakami, Osamu; Oshima, Ryuji
  • Energy & Environmental Science, Vol. 5, Issue 3
  • DOI: 10.1039/c2ee01930b

Engineering the Electronic Band Structure for Multiband Solar Cells
journal, January 2011


Voltage recovery in intermediate band solar cells
journal, March 2012


Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells
journal, February 2018

  • Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki
  • Japanese Journal of Applied Physics, Vol. 57, Issue 4S
  • DOI: 10.7567/JJAP.57.04FS04

Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells
journal, August 2005

  • Luque, A.; Martí, A.; López, N.
  • Applied Physics Letters, Vol. 87, Issue 8
  • DOI: 10.1063/1.2034090

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells
journal, March 2014


Investigation of the open-circuit voltage in solar cells doped with quantum dots
journal, September 2013

  • Tayagaki, Takeshi; Hoshi, Yusuke; Usami, Noritaka
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02703

Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
journal, December 2000


Optically Triggered Infrared Photodetector
journal, December 2014

  • Ramiro, Íñigo; Martí, Antonio; Antolín, Elisa
  • Nano Letters, Vol. 15, Issue 1
  • DOI: 10.1021/nl503437z

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034

AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs
journal, April 2009


General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence
journal, July 2004

  • Luque, A.; Martı́, A.; Stanley, C.
  • Journal of Applied Physics, Vol. 96, Issue 1
  • DOI: 10.1063/1.1760836

Optical investigation of type II GaSb∕GaAs self-assembled quantum dots
journal, December 2007

  • Alonso-Álvarez, Diego; Alén, Benito; García, Jorge M.
  • Applied Physics Letters, Vol. 91, Issue 26
  • DOI: 10.1063/1.2827582

Optical properties of Al x Ga 1− x As
journal, July 1986

  • Aspnes, D. E.; Kelso, S. M.; Logan, R. A.
  • Journal of Applied Physics, Vol. 60, Issue 2
  • DOI: 10.1063/1.337426

Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
journal, August 2008

  • Oshima, Ryuji; Takata, Ayami; Okada, Yoshitaka
  • Applied Physics Letters, Vol. 93, Issue 8
  • DOI: 10.1063/1.2973398

Impact-ionization-assisted intermediate band solar cell
journal, February 2003

  • Luque, A.; Marti, A.; Cuadra, L.
  • IEEE Transactions on Electron Devices, Vol. 50, Issue 2
  • DOI: 10.1109/TED.2003.809024

Influence of the Overlap Between the Absorption Coefficients on the Efficiency of the Intermediate Band Solar Cell
journal, June 2004

  • Cuadra, L.; Marti, A.; Luque, A.
  • IEEE Transactions on Electron Devices, Vol. 51, Issue 6
  • DOI: 10.1109/TED.2004.828161