Localized UV emitters on the surface of β-Ga₂O₃

Journal Article · 02 December 2020 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-020-76967-6 · OSTI ID:1730961

Huso, Jesse; McCluskey, Matthew D.; Yu, Yinchuan; Islam, Md Minhazul; Selim, Farida

Abstract Monoclinic gallium oxide (β-Ga ₂ O ₃ ) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n -type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga ₂ O ₃ has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.

• Sponsoring Organization: USDOE
• Grant/Contract Number: FG02-07ER46386
• OSTI ID: 1730961
• Journal Information: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 10; ISSN 2045-2322
• Publisher: Nature Publishing GroupCopyright Statement
• Country of Publication: United Kingdom
• Language: English