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Title: Localized UV emitters on the surface of β-Ga2O3

Abstract

Abstract Monoclinic gallium oxide (β-Ga 2 O 3 ) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n -type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga 2 O 3 has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Washington State Univ., Pullman, WA (United States)
Sponsoring Org.:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
OSTI Identifier:
1730961
Alternate Identifier(s):
OSTI ID: 1766566
Grant/Contract Number:  
FG02-07ER46386
Resource Type:
Published Article
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Name: Scientific Reports Journal Volume: 10 Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United Kingdom
Language:
English
Subject:
36 MATERIALS SCIENCE; Electronic devices; Semiconductors

Citation Formats

Huso, Jesse, McCluskey, Matthew D., Yu, Yinchuan, Islam, Md Minhazul, and Selim, Farida. Localized UV emitters on the surface of β-Ga2O3. United Kingdom: N. p., 2020. Web. doi:10.1038/s41598-020-76967-6.
Huso, Jesse, McCluskey, Matthew D., Yu, Yinchuan, Islam, Md Minhazul, & Selim, Farida. Localized UV emitters on the surface of β-Ga2O3. United Kingdom. https://doi.org/10.1038/s41598-020-76967-6
Huso, Jesse, McCluskey, Matthew D., Yu, Yinchuan, Islam, Md Minhazul, and Selim, Farida. Thu . "Localized UV emitters on the surface of β-Ga2O3". United Kingdom. https://doi.org/10.1038/s41598-020-76967-6.
@article{osti_1730961,
title = {Localized UV emitters on the surface of β-Ga2O3},
author = {Huso, Jesse and McCluskey, Matthew D. and Yu, Yinchuan and Islam, Md Minhazul and Selim, Farida},
abstractNote = {Abstract Monoclinic gallium oxide (β-Ga 2 O 3 ) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n -type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga 2 O 3 has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.},
doi = {10.1038/s41598-020-76967-6},
journal = {Scientific Reports},
number = 1,
volume = 10,
place = {United Kingdom},
year = {2020},
month = {12}
}

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