Sulfurization as a promising surface passivation approach for both n- and p-type Si

Journal Article · Wed Jan 01 00:00:00 UTC 2020 · Conference record of the IEEE Photovoltaic Specialists Conference

DOI: https://doi.org/10.1109/PVSC45281.2020.9300395 · OSTI ID:1706719

Das, Ujjwal  ^[1]; Theisen, Robert ^[2]; Hanket, Greg ^[2]; Upadhyaya, Ajay ^[3]; Rohatgi, Ajeet ^[3]; Hua, Amandee ^[4]; Weinhardt, Lothar ^[4]; Hauschild, Dirk ^[4]; Heske, Clemens ^[4]

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1. Univ. of Delaware, Newark, DE (United States); University of Delaware
2. Univ. of Delaware, Newark, DE (United States)
3. Georgia Inst. of Technology, Atlanta, GA (United States)
4. Univ. of Nevada, Las Vegas, NV (United States)

Sulfur is shown to be an effective and promising surface passivation element for both n- and p-type Si wafers after reacting in dilute hydrogen sulfide gas (2 - 6% in argon) at 550°C. Effective minority carrier lifetimes of > 2 ms and > 0.25 ms are achieved for n- and p-type Si wafers, respectively, comparable to the industry standard thermal oxide and atomic layer deposited aluminum oxide passivation level. Surface characterization by x-ray photoelectron and emission spectroscopy reveals that sulfur is primarily bonded in a sulfide environment.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Univ. of Delaware, Newark, DE (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC)
• Grant/Contract Number: AC02-05CH11231; EE0008554
• OSTI ID: 1706719
• Journal Information: Conference record of the IEEE Photovoltaic Specialists Conference, Journal Name: Conference record of the IEEE Photovoltaic Specialists Conference Vol. 2020; ISSN 0160-8371
• Publisher: IEEECopyright Statement
• Country of Publication: United States
• Language: English