Semiconducting Small Molecules as Active Materials for p-Type Accumulation Mode Organic Electrochemical Transistors
Abstract
A series of semiconducting small molecules with bithiophene or bis-3,4-ethylenedioxythiophene cores are designed and synthesized. The molecules display stable reversible oxidation in solution and can be reversibly oxidized in the solid state with aqueous electrolyte when functionalized with polar triethylene glycol side chains. Evidence of promising ion injection properties observed with cyclic voltammetry is complemented by strong electrochromism probed by spectroelectrochemistry. Blending these molecules with high molecular weight polyethylene oxide (PEO) is found to improve both ion injection and thin film stability. The molecules and their corresponding PEO blends are investigated as active layers in organic electrochemical transistors (OECTs). For the most promising molecule:polymer blend (P4E4:PEO), p-type accumulation mode OECTs with µA drain currents, μS peak transconductances, and a µC* figure-of-merit value of 0.81 F V-1 cm-1 s-1 are obtained.
- Authors:
-
- Queen Mary Univ. of London (United Kingdom)
- Northwestern Univ., Evanston, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- National Science Foundation (NSF); USDOE
- OSTI Identifier:
- 1701775
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 6; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- ENGLISH
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Parr, Zachary S., Rashid, Reem B., Paulsen, Bryan D., Poggi, Benjamin, Tan, Ellasia, Freeley, Mark, Palma, Matteo, Abrahams, Isaac, Rivnay, Jonathan, and Nielsen, Christian B. Semiconducting Small Molecules as Active Materials for p-Type Accumulation Mode Organic Electrochemical Transistors. United States: N. p., 2020.
Web. doi:10.1002/aelm.202000215.
Parr, Zachary S., Rashid, Reem B., Paulsen, Bryan D., Poggi, Benjamin, Tan, Ellasia, Freeley, Mark, Palma, Matteo, Abrahams, Isaac, Rivnay, Jonathan, & Nielsen, Christian B. Semiconducting Small Molecules as Active Materials for p-Type Accumulation Mode Organic Electrochemical Transistors. United States. https://doi.org/10.1002/aelm.202000215
Parr, Zachary S., Rashid, Reem B., Paulsen, Bryan D., Poggi, Benjamin, Tan, Ellasia, Freeley, Mark, Palma, Matteo, Abrahams, Isaac, Rivnay, Jonathan, and Nielsen, Christian B. Fri .
"Semiconducting Small Molecules as Active Materials for p-Type Accumulation Mode Organic Electrochemical Transistors". United States. https://doi.org/10.1002/aelm.202000215. https://www.osti.gov/servlets/purl/1701775.
@article{osti_1701775,
title = {Semiconducting Small Molecules as Active Materials for p-Type Accumulation Mode Organic Electrochemical Transistors},
author = {Parr, Zachary S. and Rashid, Reem B. and Paulsen, Bryan D. and Poggi, Benjamin and Tan, Ellasia and Freeley, Mark and Palma, Matteo and Abrahams, Isaac and Rivnay, Jonathan and Nielsen, Christian B.},
abstractNote = {A series of semiconducting small molecules with bithiophene or bis-3,4-ethylenedioxythiophene cores are designed and synthesized. The molecules display stable reversible oxidation in solution and can be reversibly oxidized in the solid state with aqueous electrolyte when functionalized with polar triethylene glycol side chains. Evidence of promising ion injection properties observed with cyclic voltammetry is complemented by strong electrochromism probed by spectroelectrochemistry. Blending these molecules with high molecular weight polyethylene oxide (PEO) is found to improve both ion injection and thin film stability. The molecules and their corresponding PEO blends are investigated as active layers in organic electrochemical transistors (OECTs). For the most promising molecule:polymer blend (P4E4:PEO), p-type accumulation mode OECTs with µA drain currents, μS peak transconductances, and a µC* figure-of-merit value of 0.81 F V-1 cm-1 s-1 are obtained.},
doi = {10.1002/aelm.202000215},
journal = {Advanced Electronic Materials},
number = 6,
volume = 6,
place = {United States},
year = {Fri May 15 00:00:00 EDT 2020},
month = {Fri May 15 00:00:00 EDT 2020}
}
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