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Title: Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

Abstract

In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically relevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide materials due to their large optical bandgap. Furthermore, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W-1) operating at 1550 nm in silicon photonics enabled by strain engineering the 2D material. Non-planarized waveguide structures show a locally-induced bandgap change of 0.2 eV inside MoTe2, resulting in large photo-response, in an otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this photodetector shows a ~100X improved dark current, enabling an efficient noise equivalent power of 90 pW/Hz-0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.

Authors:
 [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [1];  [3];  [1]; ORCiD logo [4];  [1];  [2]; ORCiD logo [5];  [3]; ORCiD logo [1]
  1. George Washington Univ., Washington, DC (United States)
  2. Univ. of Minnesota, Minneapolis, MN (United States)
  3. Univ. of Texas, Austin, TX (United States)
  4. Ghent Univ., Gent (Belgium)
  5. Univ. of Pennsylvania, Philadelphia, PA (United States)
Publication Date:
Research Org.:
George Washington Univ., Washington, DC (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1696775
Grant/Contract Number:  
SC0018041; DMR-1839175; CCF-1838435
Resource Type:
Accepted Manuscript
Journal Name:
Nature Photonics
Additional Journal Information:
Journal Volume: 14; Journal Issue: 9; Journal ID: ISSN 1749-4885
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; Integrated photonics; tensile strain; KPFM; work function; TMDCs; photodetector; microring resonator; integrated optics; nanoscale materials; nanoscience and technology; optoelectronic devices and components; silicon photonics

Citation Formats

Maiti, R., Patil, C., Saadi, M. A. S. R., Xie, T., Azadani, J. G., Uluutku, B., Amin, R., Briggs, A. F., Miscuglio, M., Van Thourhout, D., Solares, S. D., Low, T., Agarwal, R., Bank, S. R., and Sorger, V. J.. Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits. United States: N. p., 2020. Web. https://doi.org/10.1038/s41566-020-0647-4.
Maiti, R., Patil, C., Saadi, M. A. S. R., Xie, T., Azadani, J. G., Uluutku, B., Amin, R., Briggs, A. F., Miscuglio, M., Van Thourhout, D., Solares, S. D., Low, T., Agarwal, R., Bank, S. R., & Sorger, V. J.. Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits. United States. https://doi.org/10.1038/s41566-020-0647-4
Maiti, R., Patil, C., Saadi, M. A. S. R., Xie, T., Azadani, J. G., Uluutku, B., Amin, R., Briggs, A. F., Miscuglio, M., Van Thourhout, D., Solares, S. D., Low, T., Agarwal, R., Bank, S. R., and Sorger, V. J.. Mon . "Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits". United States. https://doi.org/10.1038/s41566-020-0647-4. https://www.osti.gov/servlets/purl/1696775.
@article{osti_1696775,
title = {Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits},
author = {Maiti, R. and Patil, C. and Saadi, M. A. S. R. and Xie, T. and Azadani, J. G. and Uluutku, B. and Amin, R. and Briggs, A. F. and Miscuglio, M. and Van Thourhout, D. and Solares, S. D. and Low, T. and Agarwal, R. and Bank, S. R. and Sorger, V. J.},
abstractNote = {In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically relevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide materials due to their large optical bandgap. Furthermore, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W-1) operating at 1550 nm in silicon photonics enabled by strain engineering the 2D material. Non-planarized waveguide structures show a locally-induced bandgap change of 0.2 eV inside MoTe2, resulting in large photo-response, in an otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this photodetector shows a ~100X improved dark current, enabling an efficient noise equivalent power of 90 pW/Hz-0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.},
doi = {10.1038/s41566-020-0647-4},
journal = {Nature Photonics},
number = 9,
volume = 14,
place = {United States},
year = {2020},
month = {6}
}

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