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Title: Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi0.95La0.05FeO3 by quantum capacitance model

Abstract

Light-sensitive capacitance variation of Bi0.95La0.05FeO3 (BLFO) ceramics has been studied under violet to UV irradiation. The reversible capacitance enhancement up to 21% under 405 nm violet laser irradiation has been observed, suggesting a possible degree of freedom to dynamically control this in high dielectric materials for light-sensitive capacitance applications. By using ultraviolet photoemission spectroscopy (UPS), we show here that exposure of BLFO surfaces to UV light induces a counterintuitive shift of the O2p valence state to lower binding energy of up to 243 meV which is a direct signature of negative electronic compressibility (NEC). A decrease of BLFO electrical resistance agrees strongly with the UPS data suggesting the creation of a thin conductive layer on its insulating bulk under light irradiation. By exploiting the quantum capacitance model, we find that the negative quantum capacitance due to this NEC effect plays an important role in this capacitance enhancement.

Authors:
 [1];  [1];  [2];  [3];  [1];  [1];  [4];  [5];  [5];  [6];  [1];  [3]
  1. Suranaree Univ. of Technology, Nakhon Ratchasima (Thailand)
  2. Suranaree Univ. of Technology, Nakhon Ratchasima (Thailand); King Mongkut’s Univ. of Technology North Bangkok, Rayong (Thailand)
  3. Suranaree Univ. of Technology, Nakhon Ratchasima (Thailand); Thailand Center of Excellence in Physics (ThEP), Bangkok (Thailand)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  5. Synchrotron Light Research Inst., Nakhon Ratchasima (Thailand)
  6. Suranaree Univ. of Technology, Nakhon Ratchasima (Thailand); Vidyasirimedhi Inst. of Science and Technology, Rayong (Thailand)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Sponsoring Org.:
USDOE Office of Science (SC); Office of the Higher Education Commission
OSTI Identifier:
1695721
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Ceramics; Electronic properties and materials; Ferroelectrics and multiferroics; Surfaces, interfaces and thin films

Citation Formats

Nathabumroong, S., Eknapakul, T., Jaiban, P., Yotburut, B., Siriroj, S., Saisopa, T., Mo, S.-K., Supruangnet, R., Nakajima, H., Yimnirun, R., Maensiri, S., and Meevasana, W.. Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi0.95La0.05FeO3 by quantum capacitance model. United States: N. p., 2020. Web. https://doi.org/10.1038/s41598-020-61859-6.
Nathabumroong, S., Eknapakul, T., Jaiban, P., Yotburut, B., Siriroj, S., Saisopa, T., Mo, S.-K., Supruangnet, R., Nakajima, H., Yimnirun, R., Maensiri, S., & Meevasana, W.. Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi0.95La0.05FeO3 by quantum capacitance model. United States. https://doi.org/10.1038/s41598-020-61859-6
Nathabumroong, S., Eknapakul, T., Jaiban, P., Yotburut, B., Siriroj, S., Saisopa, T., Mo, S.-K., Supruangnet, R., Nakajima, H., Yimnirun, R., Maensiri, S., and Meevasana, W.. Fri . "Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi0.95La0.05FeO3 by quantum capacitance model". United States. https://doi.org/10.1038/s41598-020-61859-6. https://www.osti.gov/servlets/purl/1695721.
@article{osti_1695721,
title = {Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi0.95La0.05FeO3 by quantum capacitance model},
author = {Nathabumroong, S. and Eknapakul, T. and Jaiban, P. and Yotburut, B. and Siriroj, S. and Saisopa, T. and Mo, S.-K. and Supruangnet, R. and Nakajima, H. and Yimnirun, R. and Maensiri, S. and Meevasana, W.},
abstractNote = {Light-sensitive capacitance variation of Bi0.95La0.05FeO3 (BLFO) ceramics has been studied under violet to UV irradiation. The reversible capacitance enhancement up to 21% under 405 nm violet laser irradiation has been observed, suggesting a possible degree of freedom to dynamically control this in high dielectric materials for light-sensitive capacitance applications. By using ultraviolet photoemission spectroscopy (UPS), we show here that exposure of BLFO surfaces to UV light induces a counterintuitive shift of the O2p valence state to lower binding energy of up to 243 meV which is a direct signature of negative electronic compressibility (NEC). A decrease of BLFO electrical resistance agrees strongly with the UPS data suggesting the creation of a thin conductive layer on its insulating bulk under light irradiation. By exploiting the quantum capacitance model, we find that the negative quantum capacitance due to this NEC effect plays an important role in this capacitance enhancement.},
doi = {10.1038/s41598-020-61859-6},
journal = {Scientific Reports},
number = 1,
volume = 10,
place = {United States},
year = {2020},
month = {3}
}

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