Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi0.95La0.05FeO3 by quantum capacitance model

Nathabumroong, S.; Eknapakul, T.; Jaiban, P.; Yotburut, B.; Siriroj, S.; Saisopa, T.; Mo, S.-K.; Supruangnet, R.; Nakajima, H.; Yimnirun, R.; Maensiri, S.; Meevasana, W.

doi:10.1038/s41598-020-61859-6

Title: Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi_0.95La_0.05FeO₃ by quantum capacitance model

Journal Article · 20 March 2020 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-020-61859-6 · OSTI ID:1695721

Nathabumroong, S. ^[1]; Eknapakul, T. ^[1]; Jaiban, P. ^[2]; Yotburut, B. ^[3]; Siriroj, S. ^[1]; Saisopa, T. ^[1]; Mo, S.-K. ^[4]; Supruangnet, R. ^[5]; Nakajima, H. ^[5]; Yimnirun, R. ^[6]; Maensiri, S. ^[1]; Meevasana, W. ^[3]

Suranaree Univ. of Technology, Nakhon Ratchasima (Thailand)
Suranaree Univ. of Technology, Nakhon Ratchasima (Thailand); King Mongkut’s Univ. of Technology North Bangkok, Rayong (Thailand)
Suranaree Univ. of Technology, Nakhon Ratchasima (Thailand); Thailand Center of Excellence in Physics (ThEP), Bangkok (Thailand)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Synchrotron Light Research Inst., Nakhon Ratchasima (Thailand)
Suranaree Univ. of Technology, Nakhon Ratchasima (Thailand); Vidyasirimedhi Inst. of Science and Technology, Rayong (Thailand)

Light-sensitive capacitance variation of Bi_0.95La_0.05FeO₃ (BLFO) ceramics has been studied under violet to UV irradiation. The reversible capacitance enhancement up to 21% under 405 nm violet laser irradiation has been observed, suggesting a possible degree of freedom to dynamically control this in high dielectric materials for light-sensitive capacitance applications. By using ultraviolet photoemission spectroscopy (UPS), we show here that exposure of BLFO surfaces to UV light induces a counterintuitive shift of the O_2p valence state to lower binding energy of up to 243 meV which is a direct signature of negative electronic compressibility (NEC). A decrease of BLFO electrical resistance agrees strongly with the UPS data suggesting the creation of a thin conductive layer on its insulating bulk under light irradiation. By exploiting the quantum capacitance model, we find that the negative quantum capacitance due to this NEC effect plays an important role in this capacitance enhancement.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)

Sponsoring Organization:: USDOE Office of Science (SC); Office of the Higher Education Commission

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1695721

Journal Information:: Scientific Reports, Vol. 10, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi0.95La0.05FeO3 by quantum capacitance model

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Title: Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi_0.95La_0.05FeO₃ by quantum capacitance model