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Title: Effect of atomic passivation at Ni-MoS2 interfaces on contact behaviors

Journal Article · · Current Applied Physics

Not Available

Sponsoring Organization:
USDOE Office of Electricity (OE), Advanced Grid Research & Development. Power Systems Engineering Research
OSTI ID:
1694211
Journal Information:
Current Applied Physics, Journal Name: Current Applied Physics Journal Issue: 1 Vol. 20; ISSN 1567-1739
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English

References (42)

Air Passivation of Chalcogen Vacancies in Two-Dimensional Semiconductors journal November 2015
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Structure, dissolution, and passivation of Ni(111) electrodes in sulfuric acid solution: an in situ STM, X-ray scattering, and electrochemical study journal April 2003
Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides journal June 2015
Single-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting journal July 2013
Comparison of the binding of carbon, nitrogen, and oxygen atoms to single nickel atoms and to nickel surfaces journal June 1988
Oxygen Adsorption on Au–Ni(111) Surface Alloys journal June 2014
Influence of Nickel Catalyst Geometry on the Dissociation Barriers of H 2 and CH 4 : Ni 13 versus Ni(111) journal July 2009
High Performance Multilayer MoS2Transistors with Scandium Contacts journal December 2012
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS 2 Interfaces journal March 2014
Single-Layer MoS2 Phototransistors journal December 2011
Channel Length Scaling of MoS 2 MOSFETs journal September 2012
Electronic spin transport and spin precession in single graphene layers at room temperature journal July 2007
The rise of graphene journal March 2007
Single-layer MoS2 transistors journal January 2011
Control of valley polarization in monolayer MoS2 by optical helicity journal June 2012
A density functional theory study of the adsorption of sulfur, mercapto, and methylthiolate on Au(111) journal January 2002
Fermi-level pinning and charge neutrality level in germanium journal December 2006
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu journal April 2010
Band offsets and heterostructures of two-dimensional semiconductors journal January 2013
High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS 2 grains journal April 2013
Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium journal July 2013
Schottky barrier heights for Au and Pd contacts to MoS2 journal September 2014
Atomic and molecular oxygen adsorbed on (111) transition metal surfaces: Cu and Ni journal April 2015
Reduction of Schottky barrier height at metal/ n -Ge interface by introducing an ultra-high Sn content Ge 1− x Sn x interlayer journal November 2015
Phosphorous doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film journal February 2018
Theoretical study of fluorine-induced surface segregation of Cr in non-passivated Ni-based alloys journal October 2018
Ferromagnetic contact between Ni and MoX 2 (X  =  S, Se, or Te) with Fermi-level pinning journal February 2017
Self-Consistent Equations Including Exchange and Correlation Effects journal November 1965
Projector augmented-wave method journal December 1994
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps journal October 2006
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors journal October 2011
Atomically Thin MoS2 A New Direct-Gap Semiconductor journal September 2010
Tunneling Spin Injection into Single Layer Graphene journal October 2010
Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides journal May 2012
Generalized Gradient Approximation Made Simple journal October 1996
The electronic properties of graphene journal January 2009
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier journal April 2016
Electric Field Effect in Atomically Thin Carbon Films journal October 2004
Thermal properties of graphene: Fundamentals and applications journal November 2012