Title: Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions

Journal Article · · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Not Available

Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC52-06NA25396
OSTI ID:
1692070
Journal Information:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Journal Issue: C Vol. 432; ISSN 0168-583X
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English

Similar Records

Boron-carbide p-type layer for amorphous silicon solar cells
Journal Article · 1996 · AIP Conference Proceedings · OSTI ID:451095

Defect structure of neutron irradiated boron carbide
Journal Article · 1973 · Journal of Nuclear Materials · OSTI ID:4341160

Thermal stability of boron nitride/silicon p-n heterojunction diodes
Journal Article · 2015 · Journal of Applied Physics · OSTI ID:22492830

Related Subjects