Magnetoresistance effects in cadmium arsenide thin films
Abstract
In-plane magnetoresistance effects in the three-dimensional Dirac semimetal cadmium arsenide are studied as a function of film growth orientation, film thickness and surface Fermi level. For films with the Fermi level near the bulk nodes, which are gapped for very thin films, a pronounced planar Hall effect is observed due to the combination of magnetoresistance effects from the Berry phase and orbital magnetoresistance. At high Fermi levels, surface state transport produces weaker magnetoresistance effects. Furthermore, the results are discussed in the context of detecting signatures of the chiral anomaly.
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1690224
- Alternate Identifier(s):
- OSTI ID: 1690315
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 17; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Hall effect; Transition metals; Quantum limit; Thin films; Weyl semimetal; Arsenide
Citation Formats
Goyal, Manik, Kealhofer, David A., Schumann, Timo, and Stemmer, Susanne. Magnetoresistance effects in cadmium arsenide thin films. United States: N. p., 2020.
Web. doi:10.1063/5.0031781.
Goyal, Manik, Kealhofer, David A., Schumann, Timo, & Stemmer, Susanne. Magnetoresistance effects in cadmium arsenide thin films. United States. https://doi.org/10.1063/5.0031781
Goyal, Manik, Kealhofer, David A., Schumann, Timo, and Stemmer, Susanne. Mon .
"Magnetoresistance effects in cadmium arsenide thin films". United States. https://doi.org/10.1063/5.0031781. https://www.osti.gov/servlets/purl/1690224.
@article{osti_1690224,
title = {Magnetoresistance effects in cadmium arsenide thin films},
author = {Goyal, Manik and Kealhofer, David A. and Schumann, Timo and Stemmer, Susanne},
abstractNote = {In-plane magnetoresistance effects in the three-dimensional Dirac semimetal cadmium arsenide are studied as a function of film growth orientation, film thickness and surface Fermi level. For films with the Fermi level near the bulk nodes, which are gapped for very thin films, a pronounced planar Hall effect is observed due to the combination of magnetoresistance effects from the Berry phase and orbital magnetoresistance. At high Fermi levels, surface state transport produces weaker magnetoresistance effects. Furthermore, the results are discussed in the context of detecting signatures of the chiral anomaly.},
doi = {10.1063/5.0031781},
journal = {Applied Physics Letters},
number = 17,
volume = 117,
place = {United States},
year = {Mon Oct 26 00:00:00 EDT 2020},
month = {Mon Oct 26 00:00:00 EDT 2020}
}
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