Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

Journal Article · 19 October 2020 · Nature Communications

DOI: https://doi.org/10.1038/s41467-020-18932-5 · OSTI ID:1678742

Yun, Hyeong Jin; Lim, Jaehoon; Roh, Jeongkyun ; Neo, Darren Chi Jin ; Law, Matt; Klimov, Victor I.

Abstract The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n - and p -channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe ₂ quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe ₂ quantum dots, we realize both p - and n -channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; Univ. of California
• Grant/Contract Number: 89233218CNA000001
• OSTI ID: 1678742
• Journal Information: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 11; ISSN 2041-1723
• Publisher: Nature Publishing GroupCopyright Statement
• Country of Publication: United Kingdom
• Language: English