Molecular beam epitaxy of the magnetic Kagome metal FeSn on LaAlO3 (111)
Abstract
Materials with Kagome layers are expected to give rise to rich physics arising from band structures with topological properties, spin liquid behavior, and the formation of Skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on the (111) oriented LaAlO3 substrate. Both in situ and ex situ characterizations indicate that these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. The films grow as disconnected islands, with lateral dimensions on the micron meter scale. By patterning Pt electrodes using a focused electron beam, the longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.
- Authors:
-
[1]
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Energy Frontier Research Centers (EFRC) (United States). Center for the Advancement of Topological Semimetals (CATS)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1671751
- Alternate Identifier(s):
- OSTI ID: 1671848
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 10; Journal ID: ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Epitaxy; Topological properties; Ferromagnetism; Kagome lattices
Citation Formats
Hong, Deshun, Liu, Changjiang, Hsiao, Haw-Wen, Jin, Dafei, Pearson, John E., Zuo, Jian-Min, and Bhattacharya, Anand. Molecular beam epitaxy of the magnetic Kagome metal FeSn on LaAlO3 (111). United States: N. p., 2020.
Web. doi:10.1063/5.0001909.
Hong, Deshun, Liu, Changjiang, Hsiao, Haw-Wen, Jin, Dafei, Pearson, John E., Zuo, Jian-Min, & Bhattacharya, Anand. Molecular beam epitaxy of the magnetic Kagome metal FeSn on LaAlO3 (111). United States. https://doi.org/10.1063/5.0001909
Hong, Deshun, Liu, Changjiang, Hsiao, Haw-Wen, Jin, Dafei, Pearson, John E., Zuo, Jian-Min, and Bhattacharya, Anand. Mon .
"Molecular beam epitaxy of the magnetic Kagome metal FeSn on LaAlO3 (111)". United States. https://doi.org/10.1063/5.0001909. https://www.osti.gov/servlets/purl/1671751.
@article{osti_1671751,
title = {Molecular beam epitaxy of the magnetic Kagome metal FeSn on LaAlO3 (111)},
author = {Hong, Deshun and Liu, Changjiang and Hsiao, Haw-Wen and Jin, Dafei and Pearson, John E. and Zuo, Jian-Min and Bhattacharya, Anand},
abstractNote = {Materials with Kagome layers are expected to give rise to rich physics arising from band structures with topological properties, spin liquid behavior, and the formation of Skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on the (111) oriented LaAlO3 substrate. Both in situ and ex situ characterizations indicate that these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. The films grow as disconnected islands, with lateral dimensions on the micron meter scale. By patterning Pt electrodes using a focused electron beam, the longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.},
doi = {10.1063/5.0001909},
journal = {AIP Advances},
number = 10,
volume = 10,
place = {United States},
year = {Mon Oct 12 00:00:00 EDT 2020},
month = {Mon Oct 12 00:00:00 EDT 2020}
}
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