Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics
Abstract
Metal halide perovskites offer a wide and tunable bandgap, making them promising candidates for top–cell absorbers in tandem photovoltaics. In this work, the authors aim to understand the atomic layer deposition (ALD) precursor–perovskite interactions of the tin oxide ALD system and the role of organic fullerenes at the perovskite–tin oxide interface while establishing a framework for developing alternative perovskite–compatible ALD processes in the future. It is shown, in the case of tin oxide ALD growth with tetrakis(dimethylamino)tin(IV) and water on FA0.83Cs0.17Pb(I0.83Br0.17)3 perovskite, that perovskite stability is most sensitive to metal–organic exposure at elevated temperatures with an onset near 110 °C, resulting in removal of the formamidinium cation. Transitioning from ALD to pulsed–chemical vapor deposition tin oxide growth can minimize the degradation effects. Investigation of fullerenes at the perovskite interface shows that thin fullerene layers offer minor improvements to perovskite stability under ALD conditions, but significant enhancement in carrier extraction. Fullerene materials are undesirable due to fabrication cost and poor mechanical stability. Compositional tuning of the perovskite material can improve the fullerene–free device performance. Furthermore, this method is demonstrated with a bromine–rich perovskite phase to enable an 8.2% efficient perovskite device with all–inorganic extraction layers.
- Authors:
-
[1];
- Stanford University, CA (United States)
- Massachusetts Institute of Technology, Cambridge, MA (United States)
- Publication Date:
- Research Org.:
- Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1671800
- Alternate Identifier(s):
- OSTI ID: 1457065
- Grant/Contract Number:
- EE0008167; EE0008154
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Energy Materials
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 23; Journal ID: ISSN 1614-6832
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Palmstrom, Axel F., Raiford, James A., Prasanna, Rohit, Bush, Kevin A., Sponseller, Melany, Cheacharoen, Rongrong, Minichetti, Maxmillian C., Bergsman, David S., Leijtens, Tomas, Wang, Hsin-Ping, Bulović, Vladimir, McGehee, Michael D., and Bent, Stacey F. Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics. United States: N. p., 2018.
Web. doi:10.1002/aenm.201800591.
Palmstrom, Axel F., Raiford, James A., Prasanna, Rohit, Bush, Kevin A., Sponseller, Melany, Cheacharoen, Rongrong, Minichetti, Maxmillian C., Bergsman, David S., Leijtens, Tomas, Wang, Hsin-Ping, Bulović, Vladimir, McGehee, Michael D., & Bent, Stacey F. Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics. United States. https://doi.org/10.1002/aenm.201800591
Palmstrom, Axel F., Raiford, James A., Prasanna, Rohit, Bush, Kevin A., Sponseller, Melany, Cheacharoen, Rongrong, Minichetti, Maxmillian C., Bergsman, David S., Leijtens, Tomas, Wang, Hsin-Ping, Bulović, Vladimir, McGehee, Michael D., and Bent, Stacey F. Mon .
"Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics". United States. https://doi.org/10.1002/aenm.201800591. https://www.osti.gov/servlets/purl/1671800.
@article{osti_1671800,
title = {Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics},
author = {Palmstrom, Axel F. and Raiford, James A. and Prasanna, Rohit and Bush, Kevin A. and Sponseller, Melany and Cheacharoen, Rongrong and Minichetti, Maxmillian C. and Bergsman, David S. and Leijtens, Tomas and Wang, Hsin-Ping and Bulović, Vladimir and McGehee, Michael D. and Bent, Stacey F.},
abstractNote = {Metal halide perovskites offer a wide and tunable bandgap, making them promising candidates for top–cell absorbers in tandem photovoltaics. In this work, the authors aim to understand the atomic layer deposition (ALD) precursor–perovskite interactions of the tin oxide ALD system and the role of organic fullerenes at the perovskite–tin oxide interface while establishing a framework for developing alternative perovskite–compatible ALD processes in the future. It is shown, in the case of tin oxide ALD growth with tetrakis(dimethylamino)tin(IV) and water on FA0.83Cs0.17Pb(I0.83Br0.17)3 perovskite, that perovskite stability is most sensitive to metal–organic exposure at elevated temperatures with an onset near 110 °C, resulting in removal of the formamidinium cation. Transitioning from ALD to pulsed–chemical vapor deposition tin oxide growth can minimize the degradation effects. Investigation of fullerenes at the perovskite interface shows that thin fullerene layers offer minor improvements to perovskite stability under ALD conditions, but significant enhancement in carrier extraction. Fullerene materials are undesirable due to fabrication cost and poor mechanical stability. Compositional tuning of the perovskite material can improve the fullerene–free device performance. Furthermore, this method is demonstrated with a bromine–rich perovskite phase to enable an 8.2% efficient perovskite device with all–inorganic extraction layers.},
doi = {10.1002/aenm.201800591},
journal = {Advanced Energy Materials},
number = 23,
volume = 8,
place = {United States},
year = {Mon Jun 25 00:00:00 EDT 2018},
month = {Mon Jun 25 00:00:00 EDT 2018}
}
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Figure 1: X-ray diffraction pattern of perovskite thin films under specific reactor conditions for (a) no organic extraction layers and (b) with a 1nm LiF and 10 nm C60 layer. (c) The ratio of the PbI2 (001) and perovskite (100) peak integrated areas are plotted illustrating the relative extent ofmore »
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